Allicdata Part #: | CY14B101LA-BA25XIT-ND |
Manufacturer Part#: |
CY14B101LA-BA25XIT |
Price: | $ 10.39 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC NVSRAM 1M PARALLEL 48FBGA |
More Detail: | NVSRAM (Non-Volatile SRAM) Memory IC 1Mb (128K x 8... |
DataSheet: | CY14B101LA-BA25XIT Datasheet/PDF |
Quantity: | 1000 |
2000 +: | $ 9.44377 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | NVSRAM |
Technology: | NVSRAM (Non-Volatile SRAM) |
Memory Size: | 1Mb (128K x 8) |
Write Cycle Time - Word, Page: | 25ns |
Access Time: | 25ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 48-TFBGA |
Supplier Device Package: | 48-FBGA (6x10) |
Base Part Number: | CY14B101 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Memory is an important and integral part of any computing system. It is used for storing data, programs, and other important information. The CY14B101LA-BA25XIT is a memory device that can be used for a wide range of applications. This article will explore the application fields and working principles of the CY14B101LA-BA25XIT.
The CY14B101LA-BA25XIT is a high-speed, non-volatile memory device designed for a variety of applications, such as code storage, data storage, and parameter storage. It is a CMOS EEPROM that is available in densities of 128Kb and 256Kb. The CY14B101LA-BA25XIT has an operating temperature range of -55°C to +125°C, a read current of 1mA and a write current of 10mA. It is also available in a wide variety of supply voltage levels, allowing it to be used in a wide range of applications.
One of the main applications for the CY14B101LA-BA25XIT is code storage. It can be used to store program code for microcontrollers and other embedded devices. Additionally, it can be used to store bootcode and firmware for a wide variety of applications. This makes it an ideal memory device for embedded applications.
The CY14B101LA-BA25XIT can also be used for data storage. It can be used for the storage of large amounts of data in both serial and parallel form. It is also capable of storing parameters and settings that are used in a wide variety of applications. This makes it a versatile memory device that can be used for a wide range of applications.
The working principle of the CY14B101LA-BA25XIT is based on the charge pump concept. This is a principle where an electric charge is “pumped” into a semiconductor device in order to store data in a small space. The charge pump works in conjunction with other circuitry to ensure that data is stored with a minimum of power consumption.
In addition to its charge pump principle, the CY14B101LA-BA25XIT also features a wide variety of features designed to ensure data integrity. These features include ECC (Error Correction Code) and parity errors that can detect and correct data errors. Additionally, the device has a write protection circuit to guard against accidental or malicious write operations.
The CY14B101LA-BA25XIT is a flexible and reliable memory device that can be used for a wide range of application. It is ideal for code storage, data storage, and parameter storage, and features a variety of features designed to ensure data integrity. Its charge pump principle ensures that data is stored with a minimum of power consumption, making it an ideal memory device for embedded applications.
The specific data is subject to PDF, and the above content is for reference
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