CY14B108K-ZS25XIT Allicdata Electronics
Allicdata Part #:

CY14B108K-ZS25XIT-ND

Manufacturer Part#:

CY14B108K-ZS25XIT

Price: $ 30.02
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC NVSRAM 8M PARALLEL 44TSOP II
More Detail: NVSRAM (Non-Volatile SRAM) Memory IC 8Mb (1M x 8) ...
DataSheet: CY14B108K-ZS25XIT datasheetCY14B108K-ZS25XIT Datasheet/PDF
Quantity: 1000
1000 +: $ 27.29880
Stock 1000Can Ship Immediately
$ 30.02
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Memory Size: 8Mb (1M x 8)
Write Cycle Time - Word, Page: 25ns
Access Time: 25ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II
Base Part Number: CY14B108
Description

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The CY14B108K-ZS25XIT is a type of memory that is widely used in many different types of electronics. It is a single chip SRAM memory, which is designed to deliver fast access time and low power consumption while offering high temperature and radiation resistance. It is ideal for implementations in space borne applications, earth observation systems, telecommunications, and military systems.

The CY14B108K-ZS25XIT comes in different speeds and density, ranging from four megabits to 128 megabits for its SRAM. The standard SRAM operates at a frequency of 33MHz, and the temperature range is from -55 to + 125 ℃. It is available in a range of packages such as TQFP and the PBGA packages. It has a current consumption of 150mA in active mode which may vary for different packages.

The CY14B108K-ZS25XIT operates on a common memory technology known as synchronous dynamic random access memory, which is also known as SDRAM. It is a type of memory that has a synchronous interface and an internal command sequencer. It allows fast access times and provides error checking and correction capabilities.

The working principle behind the CY14B108K-ZS25XIT is based on a clocked operation. It stores data in a bank of memory cells, each one consisting of two transistors. In order to read or write data to the memory cells, a clock signal is generated and used as the control signal. It then sends the data to the cells, where it is stored until it is needed again.

The CY14B108K-ZS25XIT can be used in a variety of applications due to its high performance at low power. It is well suited for communications, consumer electronics and medical devices as well as other applications such as consumer and industrial applications. The device also features features such as data bus widths and low voltage operation, making it a key component in embedded system applications.

In conclusion, the CY14B108K-ZS25XIT is a single chip SRAM memory that offers excellent data access times and low power consumption. It is designed to meet the requirements of a variety of applications, including communications, consumer electronics and medical devices as well as embedded system applications. It is available in different speeds and density and it is offered in various packages. It operates on the synchronous dynamic random access memory, a type of memory technology with a synchronous interface and an internal command sequencer, which allows for fast access times and error checking and correction capabilities.

The specific data is subject to PDF, and the above content is for reference

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