Allicdata Part #: | 428-3776-2-ND |
Manufacturer Part#: |
CY14B101LA-SP25XIT |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC NVSRAM 1M PARALLEL 48SSOP |
More Detail: | NVSRAM (Non-Volatile SRAM) Memory IC 1Mb (128K x 8... |
DataSheet: | CY14B101LA-SP25XIT Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | NVSRAM |
Technology: | NVSRAM (Non-Volatile SRAM) |
Memory Size: | 1Mb (128K x 8) |
Write Cycle Time - Word, Page: | 25ns |
Access Time: | 25ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 48-BSSOP (0.295", 7.50mm Width) |
Supplier Device Package: | 48-SSOP |
Base Part Number: | CY14B101 |
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Memory is one of the most essential components of any computing system. It stores data and programs in order to be utilized by the processor. There are various types of memory available, and one of the most common types is DRAM. DRAM stands for Dynamic Random Access Memory. It is often used in applications where a high speed of access is required.
CY14B101LA-SP25XIT is a type of DRAM memory that belongs to the SP25XIT family. It is composed of an integrated array of 8.4 million cells organized as 25k x 10 words. It is fabricated with a single poly-silicon layer, two metal layers, and supports a fast burst access time as low as 55ns. The device is specifically designed to be used in system based on microprocessors that gather data from a variety of sources.
The SP25XIT family of DRAM memory provides support for leading edge memory technologies. It supports linearly addressed random access memory and is targeted to applications where fast access times are needed, such as network routers, digital signal processors (DSPs), and data acquisition systems. In addition, it offers built-in ECC support, making it ideal for systems that require high reliability.
A CY14B101LA-SP25XIT memory chip works by harnessing electrical or electrostatic charges stored in capacitors. Each capacitor (the tiny storage cells) stores a single bit. In order to read or write this bit, the charging and discharging processes used to control the capacitor’s charge levels must be timed exactly. This timing must be exact because if the timing is too slow, the data will be lost.
The CY14B101LA-SP25XIT uses parallel DMA (Direct Memory Access) to move data quickly to and from the memory array. The parallel DMA transfer technique allows large amounts of data to be moved from location to another with minimal lag time. Additionally, the chip also supports variable speed synchronous RAM (SRAM) and read/burst SRAM access. The synchronous burst and variable speed SRAM support allows for even higher speed data access.
In conclusion, the CY14B101LA-SP25XIT DRAM memory chip is a highly reliable and powerful memory solution. It offers support for leading edge memory technologies, allowing it to be used in many different types of applications. It works by harnessing electrical or electrostatic charges stored in capacitors, and by utilizing parallel DMA transfer technique. Furthermore, this DRAM also offers ECC support, enabling it to be used in systems requiring high reliability.
The specific data is subject to PDF, and the above content is for reference
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