| Allicdata Part #: | CY14B104L-BA25XI-ND |
| Manufacturer Part#: |
CY14B104L-BA25XI |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Cypress Semiconductor Corp |
| Short Description: | IC NVSRAM 4M PARALLEL 48FBGA |
| More Detail: | NVSRAM (Non-Volatile SRAM) Memory IC 4Mb (512K x 8... |
| DataSheet: |  CY14B104L-BA25XI Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Series: | -- |
| Packaging: | Tube |
| Part Status: | Obsolete |
| Memory Type: | Non-Volatile |
| Memory Format: | NVSRAM |
| Technology: | NVSRAM (Non-Volatile SRAM) |
| Memory Size: | 4Mb (512K x 8) |
| Write Cycle Time - Word, Page: | 25ns |
| Access Time: | 25ns |
| Memory Interface: | Parallel |
| Voltage - Supply: | 2.7 V ~ 3.6 V |
| Operating Temperature: | -40°C ~ 85°C (TA) |
| Mounting Type: | Surface Mount |
| Package / Case: | 48-TFBGA |
| Supplier Device Package: | 48-FBGA (6x10) |
| Base Part Number: | CY14B104 |
Description
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Memory
CY14B104L-BA25XI is a unit of non-volatile static random-access memory (SRAM) whose application field and working principle will be discussed in this article.
As a type of integrated circuit memory, SRAM is an ideal choice for applications that demand fast read/write speeds, low-power consumption, and high data retention. Thechip CY14B104L-BA25XI is a generalized serial configuration memory device which provides 117,576 bits of user-programmable memory. It features a 2.2V to3.3V write voltage range, 1MHz clock programming rate and a VCC operating voltage range of 1.7V to 3.6V.
In the application field, CY14B104L-BA25XI is used in embedded processors and controllers, FPGAs and digital signal processors, and other devices that require low-cost, reliable non-volatile storage. Its small size, low-power consumption, and wide voltage ranges make it suitable for applications where space and power are limited. It can also be used as an efficient storage device in systems where random data access is a must.
At the operating level, the CY14B104L-BA25XI works using an internal oscillator to divide an external clock signal into cycles of varying length. During each cycle, the chip captures data from an external data bus and stores it before releasing it. The data is retrieved by sending the address of the desired data to the chip through the address pins. Upon receipt of the address, the chip searches its memory for the corresponding data and retrieves it.
Furthermore, the CY14B104L-BA25XI is also capable of random data access and data protection features. It features random data access with no consecutive data access penalties, 256-byte page mode, optional permanent write protection, and a write protect input pin. This ensures that data is always stored securely.
In conclusion, the CY14B104L-BA25XI is a non-volatile static random-access memory (SRAM) with a variety of application fields and working principles. It is ideal for applications that demand fast read/write speeds, low-power consumption, and reliable non-volatile storage. Its random data access and data protection features make it a good choice for systems where secure storage of data is a must.
CY14B104L-BA25XI is a unit of non-volatile static random-access memory (SRAM) whose application field and working principle will be discussed in this article.
As a type of integrated circuit memory, SRAM is an ideal choice for applications that demand fast read/write speeds, low-power consumption, and high data retention. Thechip CY14B104L-BA25XI is a generalized serial configuration memory device which provides 117,576 bits of user-programmable memory. It features a 2.2V to3.3V write voltage range, 1MHz clock programming rate and a VCC operating voltage range of 1.7V to 3.6V.
In the application field, CY14B104L-BA25XI is used in embedded processors and controllers, FPGAs and digital signal processors, and other devices that require low-cost, reliable non-volatile storage. Its small size, low-power consumption, and wide voltage ranges make it suitable for applications where space and power are limited. It can also be used as an efficient storage device in systems where random data access is a must.
At the operating level, the CY14B104L-BA25XI works using an internal oscillator to divide an external clock signal into cycles of varying length. During each cycle, the chip captures data from an external data bus and stores it before releasing it. The data is retrieved by sending the address of the desired data to the chip through the address pins. Upon receipt of the address, the chip searches its memory for the corresponding data and retrieves it.
Furthermore, the CY14B104L-BA25XI is also capable of random data access and data protection features. It features random data access with no consecutive data access penalties, 256-byte page mode, optional permanent write protection, and a write protect input pin. This ensures that data is always stored securely.
In conclusion, the CY14B104L-BA25XI is a non-volatile static random-access memory (SRAM) with a variety of application fields and working principles. It is ideal for applications that demand fast read/write speeds, low-power consumption, and reliable non-volatile storage. Its random data access and data protection features make it a good choice for systems where secure storage of data is a must.
The specific data is subject to PDF, and the above content is for reference
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