CY14B104NA-ZS25XET Allicdata Electronics
Allicdata Part #:

CY14B104NA-ZS25XET-ND

Manufacturer Part#:

CY14B104NA-ZS25XET

Price: $ 25.17
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC NVSRAM 4M PARALLEL
More Detail: NVSRAM (Non-Volatile SRAM) Memory IC 4Mb (256K x 1...
DataSheet: CY14B104NA-ZS25XET datasheetCY14B104NA-ZS25XET Datasheet/PDF
Quantity: 1000
1000 +: $ 22.88520
Stock 1000Can Ship Immediately
$ 25.17
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Memory Size: 4Mb (256K x 16)
Write Cycle Time - Word, Page: 25ns
Access Time: 25ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 125°C (TA)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II
Description

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CY14B104NA-ZS25XET Memory Application Field and Working Principle

Memory, a central component in most computing systems, is a collection of digital financial system components which is used to store data and programs which are essential for the operation and functioning of the computer. The CY14B104NA-ZS25XET is a distinct type of memory specifically known as a non-volatile Static Random Access Memory (NVS-RAM), which is utilized for the storage and quick retrieval of data.

Application Fields

The CY14B104NA-ZS25XET NVS-RAM is suitable for a variety of applications in various industries, including in industrial control systems and embedded systems like automotive, server, and aviation. The memory device is often used in industrial applications for its high reliability. For example, the CY14B104NA-ZS25XET features a low voltage operation (2.2 to 3V) that allows applications such as fast startup and data retention in larger memory devices.

The CY14B104NA-ZS25XET NVS-RAM can also be employed in real-time clock (RTC) applications since the low voltage operation allows for low power USIM cards which provide necessary power to keep the device running even when the main power source is not present. Additionally, its highly structure architecture makes it a suitable choice for medical instrumentation with its low voltage standby memory feature.

Working Principle

The CY14B104NA-ZS25XET NVS-RAM features its own Flash EPCS control circuitry, as well as a wide variety of control circuits including write/erase auto-verification, charge/discharge protection, adaptive BCHR loading/unloading, and advanced dual-level bi-directional throttling amongst others. This architecture allows the device to utilize its own non-volatile Static Random Access Memory (NVS-RAM) cells to store data while allowing it to be instantly retrieved when requested.

The use of the NVS-RAM module on the chip allows for faster writes and access to data than with most other types of RAM, as well as a layer of advanced security. In addition, the device offers power continuity, meaning it retains its contents even when the power is removed. This preserves the data stored in the memory even when the main power source is switched off.

Conclusion

Overall, the CY14B104NA-ZS25XET NVS-RAM is a reliable and secure type of memory which broadens the range of application fields. Its low voltage operation and Flash EPCS control circuitry make it well-suited for industrial control systems, embedded systems, and real-time clock (RTC) applications. Its cost-effectiveness, quick data reads and writes, and power continuity capabilities make the CY14B104NA-ZS25XET an attractive choice for many applications.

The specific data is subject to PDF, and the above content is for reference

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