CY14B108N-BA25XI Allicdata Electronics
Allicdata Part #:

428-3281-ND

Manufacturer Part#:

CY14B108N-BA25XI

Price: $ 48.64
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC NVSRAM 8M PARALLEL 48FBGA
More Detail: NVSRAM (Non-Volatile SRAM) Memory IC 8Mb (512K x 1...
DataSheet: CY14B108N-BA25XI datasheetCY14B108N-BA25XI Datasheet/PDF
Quantity: 56
1 +: $ 48.64230
10 +: $ 47.18300
100 +: $ 46.21020
1000 +: $ 45.23730
10000 +: $ 43.77810
Stock 56Can Ship Immediately
$ 48.64
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Memory Size: 8Mb (512K x 16)
Write Cycle Time - Word, Page: 25ns
Access Time: 25ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFBGA
Supplier Device Package: 48-FBGA (6x10)
Base Part Number: CY14B108
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The CY14B108N-BA25XI is a type of non-volatile memory that offers a safe storage for a wide range of applications. This memory technology offers high speed access to data, a low power draw and it is designed to withstand a wide range of temperatures and is resistant to shock and vibration. It can be used in a variety of applications, from providing reliable data storage, to connecting peripherals and moving data quickly.

The main application fields of this memory are industrial controllers, embedded systems, medical devices, robotics, automotive and HVAC controllers, or any application that requires safe, reliable data storage and retrieval in moderately harsh environments. It is ideal for use in applications where reliable data storage over a long period of time is essential.

The working principle of the CY14B108N-BA25XI module is based on the floating-gate technology, where a thin layer of silicon dioxide is formed inside the chip, which lies between the floating-gate and the substrate of the chip. The floating-gate is charged or discharged with the use of a transistor connected to it, thus allowing the memory cell to store its data. The data in the floating-gate is protected from any external distortion or errors.

The memory can be programmed through a programming algorithm that is implemented in the chip. This programming algorithm ensures that the data stored in the memory is read and written in a safe and reliable way. Programming is done with the help of a programming signal sent from a microcontroller. The programming algorithm also ensures that the data written to the memory is not lost due to any power loss or disturbances.

The CY14B108N-BA25XI is a high-performance memory module, which is able to work in a wide range of temperatures and is shock and vibration resistant. It can support burst modes and data transfer speeds of up to 150 MB/sec. It also provides per-bit error detection and correction for reliable data storage and retrieval. This memory technology is widely used because of its reliability and performance, making it a preferred choice for many applications.

The specific data is subject to PDF, and the above content is for reference

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