CY14V101NA-BA25XIT

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Memory Type:	Non-Volatile
Memory Format:	NVSRAM
Technology:	NVSRAM (Non-Volatile SRAM)
Memory Size:	1Mb (64K x 16)
Write Cycle Time - Word, Page:	25ns
Access Time:	25ns
Memory Interface:	Parallel
Voltage - Supply:	2.7 V ~ 3.6 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	48-TFBGA
Supplier Device Package:	48-FBGA (6x10)

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Memory

CY14V101NA-BA25XIT is a nonvolatile static random access memory (SRAM) device with an enhanced low voltage read capability. It has the potential to change the way memory is used in embedded applications due to its low power consumption. The device offers an array of 1024 bits, organized as 32 bytes. It has an x18 organization, 16 of its bits are dedicated to parity bits. This device is organized as x13 without parity bits.CY14V101NA-BA25XIT utilizes a three-transistor NOR configuration in order to perform a random access read/write operation. This arrangement makes it several times faster than conventional SRAM devices. Furthermore, due to its low operating voltage, it can be integrated into a variety of smart electronic devices. As shown in the figure below, CY14V101NA-BA25XIT employs four access transistors and two load transistors.The four access transistors are connected between the address inputs and the inputs of the two load transistors. These two transistors are connected to the data output and a common bit line. When the device is accessed, one of the access transistors is closed, depending on the address entered. Depending on the bit stored in the memory cell, either the first or second load transistor is enabled to store or retrieve data. Depending on which load transistor is enabled, the bit line is discharged, and the data output of the memory cell is determined.CY14V101NA-BA25XIT is used in many consumer applications such as remote monitoring, wireless communications, and smart metering. Additionally, the memory can be used in automotive electronics, automotive control systems, as well as medical and industrial instrumentation. Due to its low power consumption, this memory can be used in situations where battery power is limited or unavailable. Furthermore, due to its nonvolatile nature, the data stored in this device can be retained even after power is removed. The advantages of CY14V101NA-BA25XIT memory over traditional static RAM devices include its nonvolatile nature, speed, low operating voltage and power consumption, as well as its relatively small footprint. This device offers a high speed random access read and write up to 25MHz with a lower power consumption of 10mA. Furthermore, its small size makes it suitable for space-constrained embedded applications.In conclusion, CY14V101NA-BA25XIT is a nonvolatile static random access memory device with a three-transistor NOR configuration. This device can be used in enter memory applications with its low power consumption and small size. Its data retention capability, high speed and low operating voltage offer a significant improvement over conventional SRAM devices. As a result, it is well suited for embedded applications in consumer and automotive electronics, remote monitoring, wireless communications, smart metering and industrial instrumentation.

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