CY15B064Q-SXE Allicdata Electronics
Allicdata Part #:

428-4082-ND

Manufacturer Part#:

CY15B064Q-SXE

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FRAM 64K SPI 16MHZ 8SOIC
More Detail: FRAM (Ferroelectric RAM) Memory IC 64Kb (8K x 8) S...
DataSheet: CY15B064Q-SXE datasheetCY15B064Q-SXE Datasheet/PDF
Quantity: 128
Stock 128Can Ship Immediately
Specifications
Series: Automotive, AEC-Q100, F-RAM™
Packaging: Tube 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FRAM
Technology: FRAM (Ferroelectric RAM)
Memory Size: 64Kb (8K x 8)
Clock Frequency: 16MHz
Write Cycle Time - Word, Page: --
Memory Interface: SPI
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Description

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The CY15B064Q-SXE is a memory device from Cypress Semiconductor. It is a Serial Peripheral Interface (SPI) serial flash memory product in a 8-pin SOIC package. The CY15B064Q-SXE integrates 4M bits of memory organized into 512K x 8-bits. It offers a high-performance SPI bus and a comprehensive set of features. The CY15B064Q-SXE is ideal for applications requiring non-volatile onboard memory for storing applications program, firmware and data.

Application Field

The CY15B064Q-SXE is suitable for a wide range of applications such as consumer, industrial, automotive and medical. It can be used in a variety of applications, including program storage, mass storage drives and personal storage drives, portable media players, over-the-air software updates, medical devices, computer peripherals, imaging systems and sonar systems. In addition, its low power consumption, wide operating temperature range and wide voltage range makes it perfect for embedded applications.

Working Principle

The working principle of CY15B064Q-SXE is based on the use of magnetic field-induced current in a tunneling junction. This magnetic field-induced current is harnessed to store a charge on a floating gate, which controls the write/read of data. The entire read/write process consists of two operations: program and erase. During the program operation, charge is stored on the cells by applying a positive voltage to the control gate and a high voltage to the channel. During the erase operation, the stored charge is removed by the tunneling current between the channel and the floating gate.

The device also offers two operations to protect user data: the Block Protection Register (BPR) and the Read Protection (RP) Register. The BPR register provides various levels of write-protection. The RP register provides protection against inadvertent or intentional reads of protected blocks. In addition, the CY15B064Q-SXE also offers error correction capability which is used to ensure reliable data transmission.

The CY15B064Q-SXE is a highly reliable and user-friendly memory device with a wide range of applications. It features a low power consumption, wide operating temperature range and wide voltage range which makes it ideal for embedded applications. It is capable of reliable data transmission and error correction capability and offers various levels of write-protection and read protection.

The specific data is subject to PDF, and the above content is for reference

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