CY7C0853V-133BBI

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

CY7C0853V-133BBI Memory:

The CY7C0853V-133BBI is a 5 Volt volatile memory from Cypress Semiconductor. It combines a 128K x 8-bit SRAM and 4K x 8-bit EEPROM on a single die. This device is especially suitable for applications that require high-speed memory access as well as long write/erase cycles.

The features of this memory include single +5V power supply, 128K x 8-bit SRAM array, 4K x 8-bit EEPROM array, 1.8MHz write/erase cycles, write protection and address lock bits, ultra-low power consumption, fast access time, and low voltage detection.

Application Field : CY7C0853V-133BBI memory is used in mission-critical applications such as automotive, industrial and consumer applications where reliable, fast and energy-efficient data storage is needed. It is suitable for use in high-speed signal processing, and system controllers such as microcontrollers, as it can be programmed and erased in-system. It is also used in audio and video processing, medical imaging, and data processing.

Working Principle: The CY7C0853V-133BBI has an SRAM array and an EEPROM array. The SRAM array consists of 128K x 8-bit of memory cells, and the EEPROM array consists of 4K x 8-bit of memory cells. The SRAM array is used to store data in an ultra-fast fashion and the EEPROM array is used to store data that can be written/erased, either in-system or by an external programming/erasing circuit.

The SRAM array uses a single +5V power supply and can be accessed using the address and data lines.Read/write operations are fast and reliable, with access times of 50ns, and data is stored with a read-write speed of 1.8MHz. The EEPROM array is also powered by a single +5V supply, and can be written/erased either in-system, or using an external programming/erasing circuit. It has a write cycle time of 1.6ms and an erase/overwrite time of 2ms.

The CY7C0853V-133BBI has low power consumption, with standby mode current draw of 8µA, read/write current draw of 1mA, programming current draw of 5mA and erase current draw of 20mA. It also has integrated write protection and address lock bits, to ensure the data stored is only accessed by the intended users. It also has a low voltage detection feature that prevents data loss if the voltage drops below the specified level.

Overall, the CY7C0853V-133BBI is a highly reliable and efficient memory device for applications that require large amounts of data storage. It is suitable for use in high-speed signal processing and system controllers, as well as medical imaging and audio/video processing tasks.

The specific data is subject to PDF, and the above content is for reference