CY7C1425KV18-333BZC Allicdata Electronics
Allicdata Part #:

CY7C1425KV18-333BZC-ND

Manufacturer Part#:

CY7C1425KV18-333BZC

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC SRAM 36M PARALLEL 165FBGA
More Detail: SRAM - Synchronous, QDR II Memory IC 36Mb (4M x 9)...
DataSheet: CY7C1425KV18-333BZC datasheetCY7C1425KV18-333BZC Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, QDR II
Memory Size: 36Mb (4M x 9)
Clock Frequency: 333MHz
Write Cycle Time - Word, Page: --
Memory Interface: Parallel
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-FBGA (13x15)
Base Part Number: CY7C1425
Description

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Memory has found many applications in various fields and continues to remain a vital part of most electronic systems. One such memory device is the CY7C1425KV18-333BZC. This is a type of non-volatile memory that is designed for use in a variety of applications in electronics, computers, and other digital devices.

The CY7C1425KV18-333BZC is an on-chip solution that provides non-volatile storage for required data, instructions, and code. It is a reprogrammable, two-wire serial EEPROM device that features 32K bits of memory in 256-byte page sizes. The device is built with an 8-bit wide programming port and supports instruction cycles of up to 8 bytes in width. It can also read and write test data, such as ID codes and software instruction sets, with speeds of up to 15-µs/byte. The non-volatile memory is capable of operating at a temperature range of -40°C to +85°C and is compatible with various industry standard interfaces such as I²C, JTAG, and SPI.

CY7C1425KV18-333BZC is a versatile device as it can be used for several purposes, including automotive or consumer application. It specifically designed to store large amounts of information which can be read and written quickly and safely. Additionally, its low power consumption enables the device to store large amounts of data while consuming as little power as possible. It also offers a level of protection to the stored data by disabling access after a preset number of erase/program operations.

The working principle of the CY7C1425KV18-333BZC is based on four core mechanisms: write locking, data protection, erase/program cyling and self-refreshing. When the device is programmed, the data is stored permanently in the memory cells, allowing for quick and reliable access when required. The write locking feature allows the user to lock the memory after it has been successfully programmed, ensuring the correct data is always stored in the memory. Data protection feature protects the information stored in the device from accidental damage or corruption.

The erase/program cycling feature enables the device to be re-programmed multiple times with different instructions and data. It also allows the user to override the write protect feature and erase the existing data to make room for new programs. Finally, the device will self-refresh after a certain length of time to ensure that data remains valid and uncorrupted.

In conclusion, the CY7C1425KV18-333BZC is a highly advanced and versatile non-volatile memory device that offers many benefits to its users. It features excellent performance and data protection features, as well as low energy consumption, allowing it to be an ideal solution for most applications. Moreover, the device’s ease of programming and write-locking capabilities make it an excellent choice for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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