CY7C1021CV33-12VXC

The CY7C1021CV33-12VXC is a member of the CY7C1021CV33 family of memory integrated circuits (ICs). This product family is offered in a range of densities with either 2-Mbit (CY7C1021CV33-12VXC) or 1-Mbit (CY7C1021CV33-12VXD) memory.

This family of memories from Cypress Semiconductor is a 16 MegaWord (1 MegaWord = 1 Mbit) non-volatile ultra-low-power static random access memory (SRAM) with a 1-Mbit configuration. The CY7C1021CV33 family is offered in industrial, automotive, and consumer market levels. The temperature range for the CY7C1021CV33-12VXC and the CY7C1021CV33-12VXD components is from -40 to +85°C (-40 to +185°F).

The CY7C1021CV33-12VXC memory offers low supply current, high performance, low power, low noise, fast access time, and good reliability over temperature, voltage and process variations to meet industrial as well as automotive requirements. It also includes a wide voltage range of operation, high endurance and good data retention.

The CY7C1021CV33-12VXC family of memories offers the following features:

• High-density memory: 2-Mbit configuration with 2,048 words × 16 bits organization, or 1-Mbit configuration with 1,024 words × 16 bits organization.
• Low noise: Noise levels are reduced by up to 20% for all components.
• Fast access time: Accesses in 100 ns for both 8-bit (DQ) and 16-bit (DQ0 and DQ1) modes.
• Ultra-low power consumption: Minimizes overall power consumption for low-end and high-end applications.
• Extended operating temperature range: Available from -40 to +85°C (-40 to +185°F).
• Wide voltage range: Available from 1.7 V to 5.5 V.
• High endurance: High read and write cycling with up to 100 thousand cycles.
• Good data retention: Data can be retained for up to 10 years.

The CY7C1021CV33-12VXC memory consists of an array of SRAM cells arranged in a matrix. Each SRAM cell has two transistors and one capacitor. When the transistors are switched on, the capacitor charges up and stores a data bit – either a “1” or a “0”. The memory cells are organized into rows and columns. The row and column decoders are used to select the desired memory cell.

The CY7C1021CV33-12VXC memory operates with a single power supply. The power supply voltage is only used when the memory is accessed, thus reducing the overall power consumption. The input signals to the memory are latched by flip-flops. The flip-flops are used to synchronize the input signals to the internal clock of the memory. The clock is used to synchronize all the internal operations of the memory.

The control signals for the CY7C1021CV33-12VXC family of memories are RD, WR, EN, RESET, and CE. The RD signal is used to read data from the selected memory location. The WR signal is used to write data to the selected memory location. The EN signal is used to enable the internal operations of the memory. The RESET signal is used to reset the internal logic of the memory to its initial state. The CE signal is used to enable or disable the chip-enable logic.

Overall, the CY7C1021CV33-12VXC family of memories provides a reliable, low-power, and high-density integrated memory solution that is well suited for low-end and high-end embedded applications, such as industrial, automotive, and consumer markets.