CY7C1321KV18-250BZC

Series:	--
Packaging:	Tray
Part Status:	Active
Memory Type:	Volatile
Memory Format:	SRAM
Technology:	SRAM - Synchronous, DDR II
Memory Size:	18Mb (512K x 36)
Clock Frequency:	250MHz
Write Cycle Time - Word, Page:	--
Memory Interface:	Parallel
Voltage - Supply:	1.7 V ~ 1.9 V
Operating Temperature:	0°C ~ 70°C (TA)
Mounting Type:	Surface Mount
Package / Case:	165-LBGA
Supplier Device Package:	165-FBGA (13x15)
Base Part Number:	CY7C1321

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Introduction to CY7C1321KV18-250BZC Memory

CY7C1321KV18-250BZC is a type of static random access memory (SRAM) developed by Cypress Semiconductor. It is designed to meet the needs of embedded applications, providing access to a wide range of data and operations that can be quickly executed. With a maximum data rate of 200 MHz, the CY7C1321KV18-250BZC is capable of supporting multiple bus widths and flexible timing requirements, making it an ideal choice for embedded applications.

Application Field of CY7C1321KV18-250BZC Memory

The CY7C1321KV18-250BZC is widely used in a variety of embedded industries, including automotive, aerospace, industrial automation, medical, communications and consumer electronics. It is an ideal choice for applications such as intelligent sensor networks, Ethernet switches and routers, traffic controllers, digital signage systems, set-top boxes, gaming and entertainment consoles, data collection systems and digital cameras.The CY7C1321KV18-250BZC is also used in mission-critical and life-critical applications due to its reliability, robustness and scalability. In addition, its power-saving features, user-programmable I/O ports and wide operating temperature range make the CY7C1321KV18-250BZC a suitable choice for embedded applications subject to extreme temperature and harsh environment conditions.

Working Principle of CY7C1321KV18-250BZC Memory

The CY7C1321KV18-250BZC is a synchronous SRAM organized as 64K words × 8 bits, with a maximum data rate of 200 MHz. Its architecture is composed of six 8K × 8 blocks, which share a common Data and Address bus. The device includes six independent active-low write-enable (WE) pins and a single active-low output enable (OE) pin, enabling multiple bus widths and flexible control on read and write operations.The CY7C1321KV18-250BZC features two automatic-power management modes, enabling the device to switch between low-power and full-power modes, depending on the current operation. In the low-power mode, the device reduces power to 1/3 of the full-power level, while still providing low access latency. In the full-power mode, the device provides full data rate and access latency. Furthermore, the device includes user-programmable I/O ports, allowing for custom configurations.

Conclusion

The CY7C1321KV18-250BZC is a highly reliable and robust type of SRAM memory, ideal for a wide range of embedded applications. Its features include maximum data rate of 200 MHz, multiple bus widths, low access latency, automatic power management modes, user-programmable I/O ports and wide operating temperature range, making the device a suitable choice for various mission-/life-critical applications.

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