CY7C25652KV18-400BZXC

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The CY7C25652KV18-400BZXC is a synchronous static random access memory (SRAM). It is built on a CMOS setup, affording for especially low-power operations. This device is built around a 20-bit wide access architecture, with a 400 MHz speed grade, making it the optimal choice for embedded applications in reliable and secure situations.

Working Principle

The CY7C25652KV18-400BZXC works on the principle that when certain voltages and electric charges are applied to two conducting nodes, data is automatically stored in the memory. Upon receiving the voltage and electric charges, the memory then stores data of either 1 or 0, representing on or off. All the data stored in the SRAM can be both read and written. This is done by setting the state of the electric charges on the two conducting nodes in which it is stored.

Application Field

The CY7C25652KV18-400BZXC is ideal for use in applications requiring reliable and secure data storage. Its low-power operation offers more power savings for applications with lower computation resources by requiring a lower voltage for each operation. Its features also make it a great option for embedded situations, adding an extra layer of security and reliability over volatile storage solutions. Additionally, its wide access architecture and high speed grade make it suitable for applications with large amounts data or needing to transfer data in an efficient manner. The CY7C25652KV18-400BZXC`s credentials make it an ideal choice for applications such as consumer and automotive products, medical equipment, and module communication systems.

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