CY7C1314SV18-200BZC

Series:	--
Packaging:	Tray
Part Status:	Obsolete
Memory Type:	Volatile
Memory Format:	SRAM
Technology:	SRAM - Synchronous, QDR II
Memory Size:	18Mb (512K x 36)
Clock Frequency:	200MHz
Write Cycle Time - Word, Page:	--
Memory Interface:	Parallel
Voltage - Supply:	1.7 V ~ 1.9 V
Operating Temperature:	0°C ~ 70°C (TA)
Mounting Type:	Surface Mount
Package / Case:	165-LBGA
Supplier Device Package:	165-FBGA (13x15)
Base Part Number:	CY7C1314

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CY7C1314SV18-200BZC Memory: Application Field and Working Principle

The CY7C1314SV18-200BZC is a high-speed 512K x 16 Static RAM. It is a CMOS ASIC device that enables fast and reliable memory operations through a single 3.3V power supply. It is small, low-power, and has high signal integrity and signal strength, making it a reliable choice for many applications.

What is a Static RAM

Static RAM is a type of Random Access Memory (RAM) that uses a single transistor to store data. It is faster than Dynamic RAM (DRAM), which require two transistors in order to store data. Static RAM allows for faster read/write operations, which makes it ideal for applications that need frequent data access.

Application Fields

The CY7C1314SV18-200BZC is ideal for many applications, including:

• High-resolution digital imaging
• Wired and wireless communications networks
• Consumer electronics
• Data storage and processing

The device is also suited for single- and double-data rate memory bus architectures, and is compliant with the JESD8-2B standard.

Working Principle

The CY7C1314SV18-200BZC operates in two modes: stand-by and active. In stand-by mode, the device draws minimal power, allowing for longer battery life and lower operating costs. In active mode, the device can process data at up to 200MHz, allowing for faster data transfer operations. Data is read from and written to the device through a memory bus, which consists of up to 256 address lines and 16 data lines. The device has an integrated output buffer, which ensures that data is read accurately and quickly. A write enable (WE) line is used to control when data is written to the device.The CY7C1314SV18-200BZC is an ideal choice for applications requiring fast and reliable memory operations. Its small size, low power consumption, and high signal integrity make it a reliable and cost-effective memory solution.

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