CY7C09389V-9AXI Allicdata Electronics
Allicdata Part #:

CY7C09389V-9AXI-ND

Manufacturer Part#:

CY7C09389V-9AXI

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC SRAM 1.152M PARALLEL 100TQFP
More Detail: SRAM - Dual Port, Synchronous Memory IC 1.152Mb (6...
DataSheet: CY7C09389V-9AXI datasheetCY7C09389V-9AXI Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Write Cycle Time - Word, Page: --
Base Part Number: CY7C09389
Supplier Device Package: 100-TQFP (14x14)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3 V ~ 3.6 V
Memory Interface: Parallel
Access Time: 9ns
Series: --
Clock Frequency: 67MHz
Memory Size: 1.152Mb (64K x 18)
Technology: SRAM - Dual Port, Synchronous
Memory Format: SRAM
Memory Type: Volatile
Part Status: Obsolete
Packaging: Tray 
Description

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My

CY7C09389V-9AXI, manufactured by Cypress Semiconductor, is a static RAM module. It has a wide range of applications in embedded systems, and it is highly suitable for applications which require high performance and low voltage. In this article we will explain the application field and working principle of the CY7C09389V-9AXI.

Application Field:

The CY7C09389V-9AXI is an ideal choice for embedded systems due to its very low power consumption and high-speed operation. It is suitable for applications which require a small footprint, extreme reliability and low-voltage operation. The device also offers high-density storage, low latency and fast access time in order to provide the best performance possible. It is ideal for applications such as automotive, industrial, medical, consumer electronics and industrial internet of things.

Working Principle

The working principle of the CY7C09389V-9AXI is based on static RAM (SRAM) technology. SRAM is a type of non-volatile RAM which stores data without refresh cycles. It is composed of cross-coupled transistor cells, each consisting of four transistors arranged in a lattice configuration. These cells are connected in a matrix to form the SRAM array. The SRAM cells operate using a two-stage write-read cycle. During a write-read cycle, the data is written into the SRAM cell in the first stage and then read from it in the second stage. This process is repeated for each cell in the array.

The CY7C09389V-9AXI has an access time of 90ns, a refresh time of less than 140us, and a write time of less than 115us. The device offers an operating voltage of 2.7V to 3.6V and is tested for operation at temperatures ranging from -40°C to +85°C. It also features a 1k x 18 bit configuration, consisting of 1K x 8 memory block and 18 bit data bus. The module contains 32K bits of SRAM, which are organized into 32K x 8 bytes. The CY7C09389V-9AXI can be used to store and retrieve data in a fast, low power and reliable manner.

Conclusion:

The CY7C09389V-9AXI is an ideal choice for embedded systems, as it offers low-voltage operation and fast access times. Its wide range of applications and its low power consumption make it an ideal solution for a variety of applications. The working principle of the device is based on static RAM technology, which provides fast access time, low latency, high density storage and reliable operation. Thus, the CY7C09389V-9AXI is a valuable addition to the family of memory modules.

The specific data is subject to PDF, and the above content is for reference

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