CY7C1018DV33-10VXI Allicdata Electronics
Allicdata Part #:

428-1963-5-ND

Manufacturer Part#:

CY7C1018DV33-10VXI

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC SRAM 1M PARALLEL 32SOJ
More Detail: SRAM - Asynchronous Memory IC 1Mb (128K x 8) Paral...
DataSheet: CY7C1018DV33-10VXI datasheetCY7C1018DV33-10VXI Datasheet/PDF
Quantity: 377
Stock 377Can Ship Immediately
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 1Mb (128K x 8)
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-BSOJ (0.300", 7.62mm Width)
Supplier Device Package: 32-SOJ
Base Part Number: CY7C1018
Description

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CY7C1018DV33-10VXI is a type of memory manufactured by Cypress Semiconductor, a leading supplier with a wide range of memory components including SRAM, DRAM and flash memory. It is a low-voltage synchronous SRAM that is optimized for use in embedded systems. Its main features are high clock speed, low power consumption, wide operating temperature range and nonvolatile configurability.

The memory components available for the CY7C1018DV33-10VXI are the 8-bit data bus, the 1024Kx8 bit SRAM, and an on-die configuration memory that can be programmed with up to 8192 bytes of user-specific data. The memory can be divided into two parts, the programmable portion and the non-volatile portion. The programmable portion contains mapped SRAM and the non-volatile portion contains SRAM that is configurable and nonvolatile.

The CY7C1018DV33-10VXI is mainly used in embedded applications, industrial controllers, consumer products and mobile communication systems due to its wide range of features. It can be used in applications that require data to be stored quickly, efficiently and accurately. It is specifically designed for high-speed memory applications such as high-performance multimedia and communications systems, video capture and streaming applications, and digital video editing.

The primary advantage of the synchronous SRAM is its higher clock speed. The CY7C1018DV33-10VXI can operate at up to 266MHz, which is significantly faster than the traditional asynchronous SRAMs. In addition, the synchronous SRAM also has lower power consumption, which makes it more attractive to customers who need power-efficient memories. The CY7C1018DV33-10VXI also offers nonvolatile configurability, which means that it can retain its content even when the device is powered down.

The working principle of the CY7C1018DV33-10VXI is based on the SRAM technology. SRAM stands for Static Random Access Memory and its operation is based on transistors and capacitors. The transistors are used to store a bit of data, while the capacitors are used to store charge. When a memory location is accessed, the transistors are opened or closed, which forward or block the passage of electrons from the capacitors. This results in the flow of electrons into the memory chips, which is used to write data or read data from the memory.

In conclusion, the CY7C1018DV33-10VXI is a low-power, high-performance SRAM that is suitable for a wide range of applications. Its high clock speed and low power consumption make it an attractive option for embedded and industrial applications. Moreover, its nonvolatile configurability allows it to be used in applications that require data to be stored quickly, efficiently and accurately. It is this combination of features that make it the ideal memory component for a variety of uses.

The specific data is subject to PDF, and the above content is for reference

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