CY7C1019D-10VXIT

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction

CY7C1019D-10VXIT is a volatile, low power 32K x 8 SRAM with 10 ns access time. It belongs to the family of memory devices manufactured by Cypress Semiconductor. It combines the benefits of low power operation with the faster performance of SRAMs. The CY7C1019D-10VXIT is ideal for use in applications requiring increased memory size and improved data security.

Features

• 32K x 8 SRAM array
• 10 ns access and cycle times
• Low-power operation and standby modes
• Built-in address/data multiplexers
• 512-byte page mode operation
• Latency selectable from 1 or 2 clock cycles
• Additional features including a write protect pin, a write enable pin, a chip enable pin, and an output enable pin

Applications

The CY7C1019D-10VXIT is perfect for embedded applications, such as consumer electronics, communications systems, instrumentation, data acquisition, and more. It is especially suitable for applications where space is limited and low power operation is desired. The device is often used in industrial automation, medical, and other applications.

Working Principle

The CY7C1019D-10VXIT is composed of an 8-bit wide group of memory cells, each one arranged in a row (x) and a column (y). Data is stored in these memory cells. To access data stored in the memory, an address must be provided. The address is decoded by address decode logic which in turn generates column and row addresses. This activates the memory cell selected by the address supplied.

When a write operation is performed, the column decoder selects the appropriate memory cell, and any data stored in that cell is written to the data bus. The data bus is connected to an I/O port, which is connected to a multiplexer or a register and then to the memory cell. The column address also selects a write enable line, which in turn activates the write timing logic in order to write data to the selected memory cell.

The CY7C1019D-10VXIT provides several features to improve its performance and power efficiency. One feature is chip enable, which provides a low power standby mode and allows for fast wake-up. It also provides a write enable pin which prevents accidental writes to the memory. The device also offers the capability of write prefetching which speeds up write operations. The chip enables memory-mapped I/O which allows data to be written and read more efficiently.

Conclusion

The CY7C1019D-10VXIT is a versatile and low power 32K x 8 SRAM device with 10 ns access time. Its low power operation and built-in features make it ideal for a wide range of applications where increased memory size and improved data security are required. It is often used in industrial automation, medical, and other embedded applications.

The specific data is subject to PDF, and the above content is for reference