
Allicdata Part #: | CY7C1020CV26-15ZSXE-ND |
Manufacturer Part#: |
CY7C1020CV26-15ZSXE |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC SRAM 512K PARALLEL 44TSOP II |
More Detail: | SRAM - Asynchronous Memory IC 512Kb (32K x 16) Par... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tray |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | SRAM |
Technology: | SRAM - Asynchronous |
Memory Size: | 512Kb (32K x 16) |
Write Cycle Time - Word, Page: | 15ns |
Access Time: | 15ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.5 V ~ 2.7 V |
Operating Temperature: | -40°C ~ 125°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 44-TSOP (0.400", 10.16mm Width) |
Supplier Device Package: | 44-TSOP II |
Base Part Number: | CY7C1020 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The CY7C1020CV26-15ZSXE is a type of dynamic random access memory (DRAM) component designed for use on PCBs. This component has a special architecture with a low power consumption, making it ideal for applications where electricity and power availability are limited, such as in mobile phones or portable electronic devices. This component is also able to handle large data transfer rates, making it perfect for use in applications requiring frequent data storage and access.
The CY7C1020CV26-15ZSXE was designed in collaboration with the leading semiconductor manufacturer STMicroelectronics. This component is based on the 0.24µm CMOS process technology and features a low power architecture. It is composed of a single 2Kb DRAM cell array and a 1.2Kb SRAM cell array. It has an access time of 60ns and a refresh rate of 512ms.
The main application field of the CY7C1020CV26-15ZSXE is in embedded systems, such as digital signal processing, image processing, or communications. It can also be used in automotive and industrial control applications. This component is also capable of being used in multi-Master and multi-Slave exploration and mining operations. Due to its low power requirements, it can also be used for solar cell applications.
The working principle of the CY7C1020CV26-15ZSXE is based on the fact that it is composed of two types of memory cells: DRAM and SRAM. DRAM cells are ideal for applications that require frequent changes in memory, as they have a fast write and read cycle. SRAM is used for applications that require more of a static storage nature, as the write and read cycles are much slower. When the CY7C1020CV26-15ZSXE is read, data is accessed by the DRAM cell, while writing and deleting data is performed by the SRAM cell.
To increase the speed of access to data, the CY7C1020CV26-15ZSXE also features a "refresh" operation. This operation involves periodically setting all DRAM cells to 0, thus ensuring that all the data stored in the DRAM cell is always up to date. The refresh rate of this component is 512ms, ensuring a high speed of access to data.
Overall, the CY7C1020CV26-15ZSXE is a reliable and versatile dynamic random access memory (DRAM) component designed for use on PCBs. It combines a low power architecture with high data transfer rates, making it perfect for a range of applications from embedded systems to automotive and industrial control. Its refresh rate of 512ms ensures fast access to data stored in the memory.
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