CY7C1020CV26-15ZSXE Allicdata Electronics
Allicdata Part #:

CY7C1020CV26-15ZSXE-ND

Manufacturer Part#:

CY7C1020CV26-15ZSXE

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC SRAM 512K PARALLEL 44TSOP II
More Detail: SRAM - Asynchronous Memory IC 512Kb (32K x 16) Par...
DataSheet: CY7C1020CV26-15ZSXE datasheetCY7C1020CV26-15ZSXE Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 512Kb (32K x 16)
Write Cycle Time - Word, Page: 15ns
Access Time: 15ns
Memory Interface: Parallel
Voltage - Supply: 2.5 V ~ 2.7 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II
Base Part Number: CY7C1020
Description

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The CY7C1020CV26-15ZSXE is a type of dynamic random access memory (DRAM) component designed for use on PCBs. This component has a special architecture with a low power consumption, making it ideal for applications where electricity and power availability are limited, such as in mobile phones or portable electronic devices. This component is also able to handle large data transfer rates, making it perfect for use in applications requiring frequent data storage and access.

The CY7C1020CV26-15ZSXE was designed in collaboration with the leading semiconductor manufacturer STMicroelectronics. This component is based on the 0.24µm CMOS process technology and features a low power architecture. It is composed of a single 2Kb DRAM cell array and a 1.2Kb SRAM cell array. It has an access time of 60ns and a refresh rate of 512ms.

The main application field of the CY7C1020CV26-15ZSXE is in embedded systems, such as digital signal processing, image processing, or communications. It can also be used in automotive and industrial control applications. This component is also capable of being used in multi-Master and multi-Slave exploration and mining operations. Due to its low power requirements, it can also be used for solar cell applications.

The working principle of the CY7C1020CV26-15ZSXE is based on the fact that it is composed of two types of memory cells: DRAM and SRAM. DRAM cells are ideal for applications that require frequent changes in memory, as they have a fast write and read cycle. SRAM is used for applications that require more of a static storage nature, as the write and read cycles are much slower. When the CY7C1020CV26-15ZSXE is read, data is accessed by the DRAM cell, while writing and deleting data is performed by the SRAM cell.

To increase the speed of access to data, the CY7C1020CV26-15ZSXE also features a "refresh" operation. This operation involves periodically setting all DRAM cells to 0, thus ensuring that all the data stored in the DRAM cell is always up to date. The refresh rate of this component is 512ms, ensuring a high speed of access to data.

Overall, the CY7C1020CV26-15ZSXE is a reliable and versatile dynamic random access memory (DRAM) component designed for use on PCBs. It combines a low power architecture with high data transfer rates, making it perfect for a range of applications from embedded systems to automotive and industrial control. Its refresh rate of 512ms ensures fast access to data stored in the memory.

The specific data is subject to PDF, and the above content is for reference

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