
Allicdata Part #: | CY7C1021CV33-12ZXCT-ND |
Manufacturer Part#: |
CY7C1021CV33-12ZXCT |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC SRAM 1M PARALLEL 44TSOP II |
More Detail: | SRAM - Asynchronous Memory IC 1Mb (64K x 16) Paral... |
DataSheet: | ![]() |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Memory Type: | Volatile |
Memory Format: | SRAM |
Technology: | SRAM - Asynchronous |
Memory Size: | 1Mb (64K x 16) |
Write Cycle Time - Word, Page: | 12ns |
Access Time: | 12ns |
Memory Interface: | Parallel |
Voltage - Supply: | 3 V ~ 3.6 V |
Operating Temperature: | 0°C ~ 70°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 44-TSOP (0.400", 10.16mm Width) |
Supplier Device Package: | 44-TSOP II |
Base Part Number: | CY7C1021 |
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CY7C1021CV33-12ZXCT, a low-power static random access memory (SRAM) manufactured by Cypress Semiconductor, is a dual-ported non-volatile memory integrated circuit. It has a wide array of applications in a variety of industry sectors and can be used in a variety of memory storage and memory access applications, ranging from embedded systems and industrial automation to aerospace and military applications.
The CY7C1021CV33-12ZXCT is designed to replace traditional serial EPROMs, thus providing users with faster access times, increased density, lower power consumption and improved reliability. This memory device is available in several on-board packages, including a 44-pin PLCC, 52-pin VQFP and a 64-pin SOIC package. It is also suitable for extreme shock and vibration environments, and is fully compatible with the JEDEC Standard pinout and SCSI standard interface.
The features of the CY7C1021CV33-12ZXCT include three address lines, 16 data bus lines, a write enable line and a write protect line. It has a 256K bit capacity, and is configured as a 4K x 16bits SRAM with a maximum access time of 85ns. It also includes a 7-bit write protect mask, which prevents accidental writes to the device when it is used in static mode.
The working principle of the CY7C1021CV33-12ZXCT is based on the concept of SRAM cell. The device is composed of a group of interconnected gates and cells, which store data as binary signals. When a cell is accessed, it transfers the stored contents to another memory location, where the data can be read or written. The data is then retained on the device until it is accessed again. The write operation of the circuit is similar to that of an SRAM, but the write timing requirements are different.
The CY7C1021CV33-12ZXCT is ideal for applications that require high speed, low density memory. It can be used in a variety of embedded system designs and its wide range of features makes it suitable for a number of applications. These include automotive, communications, consumer electronics, medical equipment and gaming devices. The device is also perfectly suited for storage applications, such as memory caches, access control systems and data logging systems.
In summation, the CY7C1021CV33-12ZXCT provides an efficient and reliable low power static RAM that offers high-density, fast access and the JEDEC Standard pinout and SCSI standard interface. This memory device is capable of withstanding extreme shock and vibration environments and is perfect for many embedded system designs, memory caches, access control systems, data logging systems, automotive, consumer electronics and medical equipment applications.
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