CY7C1041GE-10VXIT Allicdata Electronics
Allicdata Part #:

CY7C1041GE-10VXIT-ND

Manufacturer Part#:

CY7C1041GE-10VXIT

Price: $ 3.61
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC SRAM 4M PARALLEL
More Detail: SRAM - Asynchronous Memory IC 4Mb (256K x 16) Para...
DataSheet: CY7C1041GE-10VXIT datasheetCY7C1041GE-10VXIT Datasheet/PDF
Quantity: 1000
500 +: $ 3.27695
Stock 1000Can Ship Immediately
$ 3.61
Specifications
Series: --
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 4Mb (256K x 16)
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Description

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Memory is a major class of integrated circuits and one of the most essential elements for computers and digital systems. At the same time, CY7C1041GE-10VXIT is one of the most popular memory devices around. It is designed to provide a high degree of flexibility and speed for those who need it. In this article, we will discuss the application field and working principle of CY7C1041GE-10VXIT.

CY7C1041GE-10VXIT is a general-purpose 10K-by-128 bit Static Random Access Memory (SRAM). It is designed to be especially useful for applications in memory-rich projects. This device was designed to replace multiple discrete memory devices with a single device. It is particularly suitable for applications that require low power consumption and fast operating frequency. It is also capable of operating over a wide temperature range making it a great choice for automotive systems. In addition to these features, this SRAM device additionally contains advanced power management capabilities, low power dissipation and a high endurance/reliability.

The CY7C1041GE-10VXIT uses advanced CMOS technology. It is fabricated with advanced semi-conductor processes and highly reliable materials. The device conforms to JEDEC 18 specifications and can operate at frequencies of up to 44 MHz. The device incorporates an advanced low voltage design which makes it suitable for use in battery powered applications. The device can be operated with a supply voltage ranging from 2.0 volts to 3.6 volts.

The CY7C1041GE-10VXIT provides for quick and easy data movement. It can be accessed directly or serially. It incorporates a Multiple Address Bus Architecture which allows for faster accessing of different memory blocks. It also enables efficient memory management and supports a variety of data formats. It is also capable of providing flexible memory control functions such as write protect and scrambled address capability.

The device also has an efficient Chip Enable Mode (CDQ) which allows users to power down unused sectors of the device in order to conserve power. This feature is especially useful for systems where only a portion of the device is utilized. It also provides a low power sleep mode which reduces the standby current of the device. In addition, the device includes a built-in data retention feature which captures data during power up/down sequences and maintains the data until power is restored.

In conclusion, the CY7C1041GE-10VXIT is a powerful and reliable memory device. It is designed for a variety of applications and projects. Its advanced features make it ideal for systems that require low power consumption, fast access time and high levels of reliability. It is perfect for automotive systems and applications which require high performance from their memory and storage devices.

The specific data is subject to PDF, and the above content is for reference

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