CY7C1049CV33-10VXAT Allicdata Electronics
Allicdata Part #:

CY7C1049CV33-10VXAT-ND

Manufacturer Part#:

CY7C1049CV33-10VXAT

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC SRAM 4M PARALLEL 36SOJ
More Detail: SRAM - Asynchronous Memory IC 4Mb (512K x 8) Paral...
DataSheet: CY7C1049CV33-10VXAT datasheetCY7C1049CV33-10VXAT Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 4Mb (512K x 8)
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 36-BSOJ (0.400", 10.16mm Width)
Supplier Device Package: 36-SOJ
Base Part Number: CY7C1049
Description

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CY7C1049CV33-10VXAT is a new kind of memory, which is commonly used in the application fields that require a fast reaction rate or a high data processing capacity such as gaming consoles, automotive navigation systems, and GPS products. The CY7C1049CV33-10VXAT memory performs the essential task of storing and accessing rapidly changing data, which needs to be transmitted quickly to ensure the product performance.

CY7C1049CV33-10VXAT is a high-speed non-volatile static RAM, featuring low current consumption, high-speed performance, and reliable data security. It offers a fast access time of 10 ns, a high-speed random access memory of 33 MHz, and a data bus width of 16 bits.

The working principle of CY7C1049CV33-10VXAT is based on the use of the different specialized cells to store individual bits of data. Each cell contains two transistors and two current sources, which act as memory elements. When power is applied, the transistors are held in a mode such that their current sources draw current evenly from each side of the cell, resulting in no charge difference across the cell. When the input of the cell is switched to a low voltage, the left current source will draw more current from the left side, creating a charge difference. This creates a high or low state, effectively storing a bit of digital information. To read the stored bit, the charge difference is read and converted into a digital value.

The memory fast access time, wide data bus width, and high-speed random access memory make it perfect for use in applications that require fast reaction speed or a large amount of data processing. It is extremely reliable, offering a high level of data security, and an ideal choice for products such as gaming consoles, automotive navigation systems, and GPS products.

The specific data is subject to PDF, and the above content is for reference

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