CY7C1049D-10VXI Allicdata Electronics
Allicdata Part #:

428-1980-5-ND

Manufacturer Part#:

CY7C1049D-10VXI

Price: $ 10.96
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC SRAM 4M PARALLEL 36SOJ
More Detail: SRAM - Asynchronous Memory IC 4Mb (512K x 8) Paral...
DataSheet: CY7C1049D-10VXI datasheetCY7C1049D-10VXI Datasheet/PDF
Quantity: 1000
1 +: $ 10.96000
10 +: $ 10.63120
100 +: $ 10.41200
1000 +: $ 10.19280
10000 +: $ 9.86400
Stock 1000Can Ship Immediately
$ 10.96
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 4Mb (512K x 8)
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 36-BSOJ (0.400", 10.16mm Width)
Supplier Device Package: 36-SOJ
Base Part Number: CY7C1049
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The CY7C1049D-10VXI is a high-speed Static RAM (SRAM) that combines low access time, low-power operation, and high speed in a chip. Its single-chip memory capacity is 2K x 8-bits. This type of chip is suitable for applications that require random access to data and is typically used in high-speed digital systems.

The CY7C1049D-10VXI operates at a voltage range of 4.75V to 5.25V. This makes it suitable for lithium-polymer battery-powered applications. It also has a wide operating temperature range and can be used in harsh conditions, up to 150C. This feature makes it suitable for automotive and aerospace applications.

The CY7C1049D-10VXI can be used in a variety of applications, including digital signal processing (DSP), data acquisition and transfer systems, cache memory for microprocessors, and network switching and routing. It can also be used for high-speed memory expansion and as a buffer for address or data multiplexing.

The CY7C1049D-10VXI has a synchronous interface, which helps reduce the number of input pins and eases the complexity of interfacing to the device. It also incorporates dynamic power management to reduce its power consumption. The chip has an asynchronous interface for support for dynamic switching, allowing for direct connection to microprocessors.

The CY7C1049D-10VXI has a column address latch (CAL) and a row address latch (RAL) to store addresses. It also has a column read/write control (CRWC) that controls the action of the output buffers. The CRWC enables the CY7C1049D-10VXI to read/write multiple columns of data in a single cycle.

The CY7C1049D-10VXI also has a number of other features such as multiple pinouts, a read/write cycle time of 35ns, and data retention voltage as low as 2.6V. It also supports multiple modes of reading and writing. The CY7C1049D-10VXI has an access time of 25ns, which is faster than many other SRAMs on the market.

In summary, the CY7C1049D-10VXI is a high-speed Static RAM with low power consumption, high speed, and low access time. It is suitable for a wide range of applications, including digital signal processing, data acquisition, microprocessor cache memory, and more. The chip has a synchronous interface and a column address latch and row address latch for storing addresses. It also has a number of other features such as multiple pinouts, a read/write cycle time of 35ns, and data retention voltage as low as 2.6V.

The specific data is subject to PDF, and the above content is for reference

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