CY7C1049D-10VXIT Allicdata Electronics
Allicdata Part #:

CY7C1049D-10VXIT-ND

Manufacturer Part#:

CY7C1049D-10VXIT

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC SRAM 4M PARALLEL 36SOJ
More Detail: SRAM - Asynchronous Memory IC 4Mb (512K x 8) Paral...
DataSheet: CY7C1049D-10VXIT datasheetCY7C1049D-10VXIT Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 4Mb (512K x 8)
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 36-BSOJ (0.400", 10.16mm Width)
Supplier Device Package: 36-SOJ
Base Part Number: CY7C1049
Description

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CY7C1049D-10V is a type of non-volatile memory. It is a 128-pin CMOS device that provides the highest density of 1Mb of all the memory available. This chip is used in applications where high density is needed, such as embedded systems, digital audio, digital video, and other applications where data needs to be stored over long periods of time. It provides both parallel and vertical organization of memory cells, which allow for greater data storage and higher performance.

The CY7C1049D-10V employs split gate dielectric EEPROM (electrically erasable programmable read only memory). It utilizes a 2.5V power supply and has an operating temperature range from 0 to 70 degrees Celsius. This memory chip comes in two variations; the NSLP (no-slower programmable latch) and SLP (slower programmable latch). Both of these variations are based on the same technology, which utilizes column and row data. The NSLP version allows for faster programming of data, while the SLP version provides a slower programming time, but can operate at higher temperatures.

The CY7C1049D-10V has a wide range of applications. It is particularly suitable for use in embedded systems, digital audio, and digital video applications. It can be used in automotive systems, medical applications, industrial systems, robotic systems, consumer electronics, and other applications that require a dependable and reliable memory. The split-gate dielectric EEPROM used in this chip allows for greater data storage and faster retrieval. The chip is also capable of cycling between 0 and VCC (voltage source) states, which allows it to handle transitions between various states quickly.

In terms of its working principle, the CY7C1049D-10V stores data by using a row and column arrangement. To store data, a logic high signal is applied to the appropriate row and column. The signal then passes through the dielectric material and is stored in the memory cell. The data is then retrieved from the memory cell by applying another logic high signal to the appropriate row and column. A series of logic 0s and 1s are used to represent the data, which is then converted into a digital signal.

The CY7C1049D-10V is a type of memory chip that offers both a high storage density and a reliable interface. Its split-gate dielectric EEPROM technology allows for greater data storage and faster retrieval. Its wide range of applications makes it suitable for use in a variety of embedded and digital applications, while its reliable performance makes it a dependable choice for these applications. With its reliable hardware and software support, the CY7C1049D-10V is the memory chip of choice for many applications.

The specific data is subject to PDF, and the above content is for reference

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