Allicdata Part #: | 428-4206-ND |
Manufacturer Part#: |
CY7C1049GN-10VXI |
Price: | $ 3.80 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC SRAM 4M PARALLEL 36SOJ |
More Detail: | SRAM - Asynchronous Memory IC 4Mb (512K x 8) Paral... |
DataSheet: | CY7C1049GN-10VXI Datasheet/PDF |
Quantity: | 191 |
1 +: | $ 3.45240 |
10 +: | $ 3.15252 |
25 +: | $ 3.09254 |
50 +: | $ 3.07138 |
190 +: | $ 2.75528 |
380 +: | $ 2.74468 |
570 +: | $ 2.57336 |
1140 +: | $ 2.46386 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | SRAM |
Technology: | SRAM - Asynchronous |
Memory Size: | 4Mb (512K x 8) |
Write Cycle Time - Word, Page: | 10ns |
Access Time: | 10ns |
Memory Interface: | Parallel |
Voltage - Supply: | 4.5 V ~ 5.5 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 36-BSOJ (0.400", 10.16mm Width) |
Supplier Device Package: | 36-SOJ |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The CY7C1049GN-10VXI is a memory device for the storage and retrieval of data, which can be used in many applications and fields. The device is a low-power, highly flexible non-volatile memory and is composed of two distinct components: a 10V non-volatile memory cell, and an EPROM (erasable programmable read-only memory) controller. This device is designed to store and retrieve data in two main modes: random-access and sequential access.
In random-access mode, any addressable memory location can be accessed directly by the controller, thus allowing immediate data retrieval. This mode is suitable for applications that require frequent and direct data retrieval, such as embedded memory systems. In sequential access mode, data is accessed one address at a time in a predefined sequence, making it better suited to applications requiring large amounts of data, such as datalogging and file storage.
The general operation of the CY7C1049GN-10VXI consists of three main stages: write, read, and erase. During the write stage, the data to be stored is written to the 10V non-volatile memory cell using an EPROM controller. The controller send the necessary signals and registers the data in the memory cell. This can be done in either random or sequential access mode. During the read stage, the desired data is read from the memory cell using the controller. The read data is sent back to the user through the controller’s outputs. Lastly, the erase stage erases the data stored in the memory cell, with the controller sending the necessary signals and registers the data in the memory cell.
In addition to embedded memory systems, the CY7C1049GN-10VXI can be used in digital audio players, robotics, medical instrumentation, automotive systems, and other memory applications. The device provides an additional advantage in terms of its low power consumption, which makes it ideal for battery-operated applications that require a long operating life.
Overall, the CY7C1049GN-10VXI is an important memory device for the storage and retrieval of data. It can be used in many applications and fields, due to its low power consumption, flexibility, and ability to access data in both random and sequential modes. This makes it a valuable tool for many different types of applications and projects.
The specific data is subject to PDF, and the above content is for reference
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