CY7C1059DV33-12ZSXIT Allicdata Electronics
Allicdata Part #:

CY7C1059DV33-12ZSXIT-ND

Manufacturer Part#:

CY7C1059DV33-12ZSXIT

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC SRAM 8M PARALLEL 44TSOP II
More Detail: SRAM - Asynchronous Memory IC 8Mb (1M x 8) Paralle...
DataSheet: CY7C1059DV33-12ZSXIT datasheetCY7C1059DV33-12ZSXIT Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 8Mb (1M x 8)
Write Cycle Time - Word, Page: 12ns
Access Time: 12ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II
Base Part Number: CY7C1059
Description

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The CY7C1059DV33-12ZSXIT is a static random access memory (SRAM) device, designed to provide fast and reliable information storage for a variety of applications. SRAMs are used for the storage of data within all kinds of electronic systems and devices, ranging from computers and mobile phones, to medical equipment and industrial automation systems.

SRAMs are a form of random access memory, allowing stored data values to be read or written in any order, without needing to search through entire address fields. This is because the memory cells of SRAMs are organized as isolated units, with each one containing its own address line. So, each memory cell can be accessed directly without any need for address-based look-up.

The CY7C1059DV33-12ZSXIT is available as a 33-bit device, with 32 data bits and one parity bit. The memory cells are made from a 0.35μm CMOS process technology, allowing them to operate at 5V, providing increased levels of power efficiency. Additionally, low levels of power leakage are achieved, minimizing the impact of the device on the total energy consumed by the system.

In terms of memory capacity, the CY7C1059DV33-12ZSXIT can store up to 4KB of data. This is equivalent to 32Kb of addressable space and allows the device to meet the requirements of many applications, therefore allowing designers to save time in development. The device also offers an asynchronous interface, allowing it to directly connect to a system bus, without the need for any external logic.

In terms of its read/write operations, the CY7C1059DV33-12ZSXIT is able to access both its data and control register files in a single clock cycle. This increases the system’s speed and efficiency over traditional SRAMs, which would require multiple cycles to access both address files.

The device also comes with an integrated parity error detection, designed to ensure correct data values are being read or written to the Memory. This provides an effective way for designers to detect any errors in their system, minimizing the chances of a malfunction or data corruption.

The CY7C1059DV33-12ZSXIT is suited for use in a range of applications, including digital signal processing, instrumentation, communications, control, and embedded systems. This makes them perfect for use in industrial, medical, automotive, and a range of other applications.

Overall, the CY7C1059DV33-12ZSXIT is an effective static random access memory, offering excellent levels of speed and reliability. With its ability to provide fast access to both data and control registers, as well as its integrated parity error detection, it makes an ideal solution for a range of data storage applications.

The specific data is subject to PDF, and the above content is for reference

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