CY7C1061GE-10ZSXI Allicdata Electronics
Allicdata Part #:

CY7C1061GE-10ZSXI-ND

Manufacturer Part#:

CY7C1061GE-10ZSXI

Price: $ 19.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC SRAM 16M PARALLEL 54TSOP
More Detail: SRAM - Asynchronous Memory IC 16Mb (1M x 16) Paral...
DataSheet: CY7C1061GE-10ZSXI datasheetCY7C1061GE-10ZSXI Datasheet/PDF
Quantity: 1000
108 +: $ 17.26520
Stock 1000Can Ship Immediately
$ 19
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 16Mb (1M x 16)
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 54-TSOP II
Description

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CY7C1061GE-10ZSXI is a memory chip developed by Cypress, a memory product company. It is a type of high-density nonvolatile SRAM, which is suitable for a wide range of applications requiring reliable data storage and control functions. The chip is comprised of a 64K-bit SRAM array and a 2048K-bit EEPROM array. It has various on-chip functions including a self-programming information store and a fast self-programming architecture.

CY7C1061GE-10ZSXI is widely used in many types of applications such as automotive, industrial, medical, consumer, and other embedded systems. It can be used for a wide range of memory applications, such as data-logging, intelligent sensors, and real-time parameter settings.

The device’s design features make it well-suited for modular and portable system designs by offering low-power operation, high-speed performance, and enhanced EMI protection. The device also offers a maximum 35MHz operation, a low-power mode, on-chip voltages protection, and fast programming time.

The working principle of CY7C1061GE-10ZSXI is relatively simple. The device consists of both a 64K-bit SRAM array and a 2048K-bit EEPROM array. It is a non-volatile memory device that can retain information even without a power supply. It operates through the use of a fast self-programming architecture and a self-programming information store.

When a device is powered on, the SRAM array stores the user data while the EEPROM array stores the data-write operations. When a write operation is requested, the SRAM data is written to the EEPROM array. The device then stores data in both the SRAM and EEPROM arrays.

When the power is turned off, the EEPROM array is used to store the user data. This ensures that the data is retained even if the power is cut off. In addition, the device is designed to provide flexibility in storage capacity, allowing the user to select a memory size ranging from 64K to 16Mbytes.

Overall, CY7C1061GE-10ZSXI is a versatile and reliable memory device suitable for a wide range of embedded systems and applications. It features low power operation, high-speed performance, and improved EMI protection. The device also provides a fast self-programming architecture, allowing it to store and retain data even when power is lost. This makes CY7C1061GE-10ZSXI a great choice for applications requiring reliable and high-performance data storage.

The specific data is subject to PDF, and the above content is for reference

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