CY7C1143KV18-400BZC

Series:	--
Packaging:	Tray
Part Status:	Obsolete
Memory Type:	Volatile
Memory Format:	SRAM
Technology:	SRAM - Synchronous, QDR II+
Memory Size:	18Mb (1M x 18)
Clock Frequency:	400MHz
Write Cycle Time - Word, Page:	--
Memory Interface:	Parallel
Voltage - Supply:	1.7 V ~ 1.9 V
Operating Temperature:	0°C ~ 70°C (TA)
Mounting Type:	Surface Mount
Package / Case:	165-LBGA
Supplier Device Package:	165-FBGA (13x15)
Base Part Number:	CY7C1143

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Introduction

CY7C1143KV18-400BZC is a single-port SRAM that utilizes a low-power CMOS technology for improved performance and endurance. This product is designed for use in embedded systems, mobile devices and is suitable for many other applications. It offers a wide range of features such as Power Down and Manual Data Write Enable functions, data retention of more than 10 years and temperature ranges of 0 to 70C. CY7C1143KV18-400BZC also features advanced process technology to reduce power consumption and help save system power.

Application Fields

CY7C1143KV18-400BZC can be used in a variety of applications, such as:

• Embedded systems
• Portable electronics
• Telecommunication equipment
• Aerospace and Defense
• Mobile phones and internet devices
• Computer Peripherals
• Industrial process control

The multi-port version of the CY7C1143KV18-400BZC is suitable for high speed and high performance applications ranging from industrial and consumer electronics, embedded systems and communications.

Working Principle

CY7C1143KV18-400BZC works by using a SRAM (Static Random Access Memory) system, which stores data in memory chips rather than in an integrated circuit. This system offers extremely fast access times, low power consumption and low manufacturing costs.The data to be stored in the CY7C1143KV18-400BZC is written to the SRAM by a logic transistor array. Each row of the SRAM is divided up into addressable addresses, which can be accessed for writing or reading data. When the address is specified, the data is either written to or read from the memory.SRAM is characterized as a volatile memory, because it loses stored data when power is removed. In order to maintain data between power cycles, the CY7C1143KV18-400BZC also includes a non-volatile redundant array that allows data retention over power cycles, offering a higher level of data security in case of power failure.

Conclusion

CY7C1143KV18-400BZC is an ideal component for embedded systems, mobile devices, portable electronics and other digital applications. Its many features make it ideal for meeting such requirements as low power consumption, fast access times and high data retention in extreme conditions. In addition, its multi-port version makes it suitable for high performance, high speed applications in both industrial and consumer markets.

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