CY7C1163KV18-550BZC Allicdata Electronics
Allicdata Part #:

CY7C1163KV18-550BZC-ND

Manufacturer Part#:

CY7C1163KV18-550BZC

Price: $ 33.07
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC SRAM 18M PARALLEL 165FBGA
More Detail: SRAM - Synchronous, QDR II+ Memory IC 18Mb (1M x 1...
DataSheet: CY7C1163KV18-550BZC datasheetCY7C1163KV18-550BZC Datasheet/PDF
Quantity: 1000
136 +: $ 30.06040
Stock 1000Can Ship Immediately
$ 33.07
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, QDR II+
Memory Size: 18Mb (1M x 18)
Clock Frequency: 550MHz
Write Cycle Time - Word, Page: --
Memory Interface: Parallel
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-FBGA (13x15)
Base Part Number: CY7C1163
Description

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CY7C1163KV18-550BZC is a type of memory device manufactured by Cypress Semiconductor. It uses a manufacturing process known as Embedded Multi- Die Interconnect Bridge (EMIB) which allows for better latency, power savings, and overall performance. This type of memory is ideal for applications where reliability, speed, and low power are critical. It is widely used in embedded systems, such as medical, industrial, and automotive applications.

The Cypress CY7C1163KV18-550BZC is a 512-Kbyte, 55 nm, synchronous SRAM based on a 2.4 voltage range for reliable operation and high-speed read/write speed of up to 250 Mbps. It is available in a variety of packages, including QFN and SOJ. The device also features an integrated clock controller to facilitate multiple frequency changes, as well as programmable burst lengths and address pointers.

CY7C1163KV18-550BZC has many advantages including a wide operating temperature range, low fall and rise times, low power consumption, and superior signal quality when compared to DRAMs or SDRAMs. Additionally, it is RoHS compliant, which makes it even more suitable for use in a wide range of applications.

The working principle of the CY7C1163KV18-550BZC is based on the SRAM principle. The storage element is organized as multiple SRAM cells, with the control circuitry to select, read, and write the data stored in the cells. The data is stored in etched capacitors within each memory cell, which acts as the storage medium. When a cell is selected, the stored data is accessed and read or written.

In terms of its application field, the CY7C1163KV18-550BZC is commonly used in embedded systems, automotive, medical and industrial devices, computer components, and consumer electronics. It is an excellent choice for applications that require low power and superior signal quality, such as automotive infotainment systems, medical imaging devices, industrial control systems, and consumer electronics.

In conclusion, the CY7C1163KV18-550BZC is a reliable and high-performance memory solution designed with EMIB technology to achieve superior signal performance, reliability, and power efficiency. It is ideal for embedded applications where reliability, speed, and low power are critical.

The specific data is subject to PDF, and the above content is for reference

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