CY7C1168KV18-450BZC

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The CY7C1168KV18-450BZC device is a type of static random access memory (SRAM), from Cypress Semiconductor. It is a 512K x8 bit low voltage synchronous SRAM that is designed for high throughput and low power applications. It is designed for applications such as fast data path memory, processor caches, high speed synchronous logic designs, audio FIFO buffers and wide buses.

The CY7C1168KV18-450BZC device is available in a 52-Pin, 5mm x 7mm, 0.,5mm Ball Pitch, TJ Lead-Free/RoHS-Compliant package, as well as a 72-Pin, 8mm x 8mm, 0.8mm Ball Pitch, TJ Lead-Free/RoHS-Compliant package.

The device features a 3.3V operating voltage range and provides a 1.8V data read voltage, which ensures compatibility with modern low power devices. The system path is designed for high throughput with a asynchronous access time of 8ns (max) and an output rise/fall time of 10nS. The device also has a standby current of 25CrA max, and a temperature range of 0°C to +85°C.

The working principle of the CY7C1168KV18-450BZC device is simple and straightforward. It stores data as voltage levels in its individual cells. When the device is powered on, all the cells are set to the same state regardless of their previous state. Data is written to cells by changing the voltage level, and read back by sensing the voltage level of the cells.

The CY7C1168KV18-450BZC is widely used in the medical, industrial, communications, automotive, and consumer markets. Medical applications include cardiopulmonary diagnostics, glucose monitors, and infusion pumps. Industrial applications include building security systems, network switches and routers, and factory process controllers. The device is used in automotive applications such as in-vehicle display systems, centralized body control modules, and electronic control units. Finally, it has wide usage in consumer products such as home appliances, digital media players, and navigation systems.

In summary, the CY7C1168KV18-450BZC device is a high performance, low voltage synchronous static random access memory (SRAM) designed for high throughput and low power applications. It features a 3.3V operating voltage range and provides a 1.8V data read voltage, and has a wide range of applications in the medical, industrial, communications, automotive, and consumer markets.

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