CY7C1245KV18-400BZC

Series:	--
Packaging:	Tray
Part Status:	Active
Memory Type:	Volatile
Memory Format:	SRAM
Technology:	SRAM - Synchronous, QDR II+
Memory Size:	36Mb (1M x 36)
Clock Frequency:	400MHz
Write Cycle Time - Word, Page:	--
Memory Interface:	Parallel
Voltage - Supply:	1.7 V ~ 1.9 V
Operating Temperature:	0°C ~ 70°C (TA)
Mounting Type:	Surface Mount
Package / Case:	165-LBGA
Supplier Device Package:	165-FBGA (13x15)
Base Part Number:	CY7C1245

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Memory is becoming increasingly important in modern computer systems, especially the recent years with the push of the gigabyte memory sizes. With these ever-growing applications, the need for more advanced, reliable and efficient memory components for large scale systems has become increasingly important, and the CY7C1245KV18-400BZC is such a product. It is a high-performance SRAM memory module that provides a high level of functionality, performance and reliability for a wide range of applications. The CY7C1245KV18-400BZC features a 512kB nonvolatile memory that supports up to 32-word read-modify-write cycles, a 16MB access time, and a 4K byte cell configuration. It is also capable of supporting multiple simultaneous accesses with a maximum latency of 1µs. The SRAM module has been designed to meet the requirements of industrial, automotive, and consumer applications. It offers a variety of features, such as a low-noise algorithm, process and data integrity, and a power saving design. The CY7C1245KV18-400BZC memory module is ideal for embedded control and instrumentation, consumer products, automotive, automotive power electronics and audio/video applications. The CY7C1245KV18-400BZC has a few key features that make it stand out in the field. It offers advanced ECC (Error Correction Code) protection to ensure data integrity, as well as the ability to store and access data even in the most challenging environmental conditions. Its process-level automated data integrity checking ensures that the data stored in the memory module remains secure in any situation. The CY7C1245KV18-400BZC also provides an optional on-chip low-noise algorithm to reduce noise interference and improve module power efficiency. This algorithm is particularly useful for industrial applications where noise reduction is of utmost importance. The memory module also provides programmable wait states which provide a way for the user to adjust the latency between read and write operations. The CY7C1245KV18-400BZC operates using a single 5V power source, making it ideal for embedded systems that rely on low power operation. Its robust design also makes it suitable for a broad spectrum of applications such as automotive, industrial, consumer, and medical. The CY7C1245KV18-400BZC has several features that make it attractive to users. It is produced with self-diagnosis and self-compensation technology to ensure reliable operation in different environments and temperatures. It also offers a high level of system integration to save board space, making it ideal for large scale applications. Finally, it comes with an 8-bit ECC feature to increase the system\'s reliability in the case of any errors. In summary, the CY7C1245KV18-400BZC provides an advanced SRAM memory solution that combines the reliability and high performance of SRAM with the flexibility of on-chip low noise circuit techniques. It is ideal for a variety of applications such as embedded control, automotive, industrial, and consumer products. It has a high level of system integration and data integrity, and an 8-bit ECC for improved reliability. All of these features make the CY7C1245KV18-400BZC an excellent choice for memory applications.

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