CY7C1320SV18-250BZC

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CY7C1320SV18-250BZC Application Field and Working Principle

CY7C1320SV18-250BZC is a high-density low-power low-voltage 32-bit static-RAM (SRAM) memory device developed by Cypress Semiconductor Corporation. It is a member of Cypress’s SUPERVSRAM family that integrates multiplexed address/data buses and advanced write cycles to reduce power consumption. The device is suitable for a variety of systems, such as embedded microcontrollers, router control units and mid-range PCs.

Category: Memory

Features

The CY7C1320SV18-250BZC device has the following features:

• Low Power Design – CY7C1320SV18-250BZC has a low active current (2mA to 4mA), allowing systems to benefit from low-power operation.
• Advanced Write Cycles – The CY7C1320SV18-250BZC features advanced write cycles, including write-to-reset, reset-to-write, write-and-verify, write-and-erase, erase-and-write, and erase operations, allowing for efficient and effective memory operations.
• Data Bus and Address Bus Multiplexing – The device incorporates 32-bit multiplexed data/address buses and advanced write cycles for reduced power.
• High Density – The device is available in 8K to 128K of SRAM. It is an ideal solution for high-density, low-voltage systems requiring a robust memory solution.
• High Speed – The device operates at up to 80 MHz with 1 clock cycle access time.

Applications

The CY7C1320SV18-250BZC device is suitable for a variety of applications, including embedded microcontrollers, router control units, and mid-range PCs. It is an ideal solution for low-power, high-density systems requiring a robust memory solution.

Working Principle

The working principle of the CY7C1320SV18-250BZC device is based on SRAM (Static Random Access Memory) technology. SRAM is a high-density form of memory that allows for fast access to data stored in its cells. The device utilizes an array of SRAM cells, each cell consisting of six transistors for storing a single bit of data. When a memory operation is performed, the cells are activated, either by writing or reading data. This is done by transferring the address and data signals to the appropriate cells. When data is written to the cells, they are charged with a logical ‘0’ or ‘1’. When reading data, the logical ‘0’ or ‘1’ is read from the cells and then sent to the output.

The device also utilizes a number of specialized memory operations, such as writing, erasing, and resetting. These operations are performed by sending specific commands and address signals to the device. The device then performs the operation specified by the command. This allows the device to fulfill a variety of memory operations efficiently and reliably.

In addition to the SRAM cells, the device also incorporates multiplexed address/data buses and advanced write cycles for reduced power consumption. This allows the device to benefit from low-power operation and maximize its total performance.

Conclusion

Overall, the CY7C1320SV18-250BZC device is a high-density, low-power, low-voltage 32-bit static-RAM (SRAM) memory device. It is suitable for a variety of applications, such as embedded microcontrollers, router control units and mid-range PCs. It is an ideal solution for low-power, high-density systems requiring a robust memory solution. The device is built on SRAM technology, with multiplexed address/data buses and advanced write cycles for reduced power consumption.

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