CY7C1345G-100AXIT

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CY7C1345G-100AXIT is a type of static random access memory (SRAM) device.It has a 16-bit wide asynchronous interface and is organized as 256K bits. It features low power, Single 3.3 V power supply, fast single-cycle access time, fast addressing and refresh cycles, high density per package, and superior performance over the existing DRAM and SRAM products. In addition, it can be used in applications that require both data storage and fast access.

This memory is used in applications such as networking, embedded systems and other digital systems that require large amounts of data. It is also used in medical devices, military electronics, as well as in automotive and other industrial applications. CY7C1345G-100AXIT is also available in a low-power version for low-power applications.

The core of this memory device is the asynchronous SRAM which is a two-stage synchronous pipeline, formed by the internal clock cycle, the internal precharge stage, and the data write-read stage.

At the start of the cycle, the internal clock cycle produces the start signal, which initiates the reset. This reset prepares the internal logic for the next cycle by resetting the internal clock and precharge terminal. After the reset is activated, the internal clock cycle takes over and produces a high-speed, two-phase clock signal. The first phase of this clock signal is used for performing a read cycle and the second phase for a write cycle. During the write cycle, the data stored in the memory cells is written onto the internal bus. During the read cycle, data from the internal bus is read from the memory cells.

The internal precharge stage is used to drive the last data bit, while the internal write-read stage performs a read operation. The internal bus is then refreshed in order to ensure that the data stored in the memory cells is always valid. This is done by driving the internal precharge terminal, which refreshes the last data bit. After the precharge stage is complete, the internal clock cycle switches to the read cycle and data is read from the memory cells and stored in the internal bus.

CY7C1345G-100AXIT also has a dedicated row and column driver, which allows for fast access times. The row and column driver allows data to be read from the memory cells and written onto the internal bus at a cycle time of one microsecond. This ensures fast speeds and low power consumption.

CY7C1345G-100AXIT is a highly reliable and efficient static random access memory (SRAM) devices with low power consumption and fast access times. It is designed for applications that require large amounts of data, such as networking, embedded systems, and other digital systems. This device is also available in a low-power version for low-power applications.

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