CY7C1345S-100AXCT

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The CY7C1345S-100AXCT is a memory device that offers a very versatile application field. It is a Single Non-Volatile Static RAM (NVSRAM) with an enhanced non-volatile power-down system, making it suitable for a variety of usage scenarios.

The device is composed of a static random access memory (SRAM) block, which is activated by enabling an internal power-down system. Therefore it is ideal for devices that require uninterrupted operation and do not have standby power.

This NVSRAM\'s primary advantage is that it can retain data in the event of an unexpected power loss. It is also low-power and fast, and can be used in small form-factor packages. Its main applications include graphical LCDs, small embedded systems, memory cards, and automotive applications.

The density of the CY7C1345S-100AXCT is 1M-bit, and the operating temperature range lies between 0 and 70 degrees Celsius. The supply voltage range is 4.5 V to 5.5 V, and the I/O voltage range is 2.7 V to 5.5 V.

The device is based on a non-volatile architecture, employing a Flash Memory block, a SRAM block and a Battery Backup block. The Backup block stores the contents of the SRAM during normal Power Cycle. During Power Down, an internal safety circuit disconnects the SRAM from the main power buses and also disconnects the Power Rail and the VDDIO from the SCL, SDA and Hold pins.

The Flash Memory block, which stores the memory contents in the static state even after power is removed, is composed of a large number of Flash Memory blocks, which are organized logically into a 16-bit data bus and a 9-bit address bus. Each Flash Memory block consists of a set of Flash Cells and Mirror Cells, which are connected to both the data bus and the address bus.

These Flash Cells can be set to 1 or 0 as required, while the Mirror Cells store the data received from the Flash Cells to prevent data loss during power cycle. When power is removed, the Mirror Cells retain the data and pass it on to the SRAM when power is restored.

The NVSRAM also has a Battery Backup circuit, consisting of a 7-bit wide RTC Subsystem. This subsystem is configured to save the system power state on its non-volatile memory. The Backup circuit receives power from the Backup Battery as soon as power is lost and transfers the retained state from the Flash Memory block to the SRAM block. This enables the contents of the SRAM to be preserved.

The CY7C1345S-100AXCT presents another distinctive feature in the form of the BioAccess Edge Authentication System, which allows for secure individual identification and a secure way to store data for user authentication. It comprises of an eFPGA, which allows for the secure management of cryptographic keys and algorithms, in combination with the SRAM block to store secure data. The secure data stored in the SRAM includes authentication data, keys and signature tables.

To conclude, the CY7C1345S-100AXCT is an ideal memory device for applications requiring uninterrupted operation and enhanced non-volatile data storage. Its versatility and ability to store data securely make it ideal for a wide range of consumer, industrial, and automotive applications.

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