CY7C1347G-250AXCT

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Memory Type:	Volatile
Memory Format:	SRAM
Technology:	SRAM - Synchronous
Memory Size:	4.5Mb (128K x 36)
Clock Frequency:	250MHz
Write Cycle Time - Word, Page:	--

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Introduction to the CY7C1347G-250AXCT Memory

CY7C1347G-250AXCT is a type of random access memory (RAM) device, which is also known as DRAM. This memory device offers a low-cost, low-power solution for a wide range of embedded applications and is suitable for use in high-performance designs. This type of device is capable of providing up to 8GB of capacity and up to 16,128 bytes of data per address. It also supports various combinations of DRAM organization and addressing, including single-access, multiple-access, and block-oriented addressing.

What is Memory?

Memory is an electronic storage device that stores digital information for a wide range of applications. Memory is typically divided into the following categories: Static RAM (SRAM), Dynamic RAM (DRAM), Flash Memory, and Non-Volatile Memory (NVM). SRAM is used in small-scale memory applications, such as caching and buffering. DRAM is typically used in larger-scale applications, such as main storage, due to its higher storage capacity and lower power consumption. Flash memory is used for storage applications that require quick retrieval time and are non-volatile. NVM is a form of memory that is non-volatile and thus requires no power to function.

CY7C1347G-250AXCT Application Field

CY7C1347G-250AXCT memory is suitable for a wide variety of memory applications, including: • Data logging, video/multimedia applications, and embedded systems• Video/graphics/gaming applications• Applications requiring high performance• Personal computer main memory applications• Mobile/embedded communication and consumer electronics• Automotive and industrial automation applications• Embedded medical devices• Network applications• Military and aerospace applications

CY7C1347G-250AXCT Working Principle

The CY7C1347G-250AXCT memory operates using dual-ported RAM technology, which enables simultaneous access of data from two ports. The device features an 8-bit addressable port (A-Port) for reading/writing data, and a 16-bit addressable port (B-Port) for reading/writing data. Both ports offer single-access through the use of an LSB address. The dual-ported nature of the device enables high-speed access, as the A-Port can access data at 6 times the bus speed, while the B-Port can access data 4 times faster. The device also includes a data line status bit that provides a data quality indicator.In addition, CY7C1347G-250AXCT offers a wide range of operating modes, including standard single-access, multiple-access, and block addressing modes. In standard single-access mode, the device allows for simultaneous read and write accesses, using either the A-Port or the B-Port. Multiple-access is similar to single-access, except multiple addresses can be read or written simultaneously. Block addressing is especially useful for LVDS operations, and works by dividing a memory block into several blocks. The device also offers an optional data line status bit that provides read/write confirmations.

Conclusion

The CY7C1347G-250AXCT memory device is a type of DRAM that provides low-cost, low-power RAM solutions for a variety of embedded applications. This device offers 8GB of capacity and up to 16,128 bytes of data per address and supports various combinations of DRAM organization and addressing, including single-access, multiple-access, and block-oriented addressing. The device features an 8-bit addressable port and a 16-bit addressable port, and offers a wide range of operating modes such as standard single-access, multiple-access, and block addressing modes. This device is ideal for high-performance designs due to its dual-ported RAM technology, allowing for simultaneous read/write access.

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