
Allicdata Part #: | CY7C1355C-100BGCT-ND |
Manufacturer Part#: |
CY7C1355C-100BGCT |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC SRAM 9M PARALLEL 119PBGA |
More Detail: | SRAM - Synchronous Memory IC 9Mb (256K x 36) Paral... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Write Cycle Time - Word, Page: | -- |
Base Part Number: | CY7C1355 |
Supplier Device Package: | 119-PBGA (14x22) |
Package / Case: | 119-BGA |
Mounting Type: | Surface Mount |
Operating Temperature: | 0°C ~ 70°C (TA) |
Voltage - Supply: | 3.135 V ~ 3.6 V |
Memory Interface: | Parallel |
Access Time: | 7.5ns |
Series: | NoBL™ |
Clock Frequency: | 100MHz |
Memory Size: | 9Mb (256K x 36) |
Technology: | SRAM - Synchronous |
Memory Format: | SRAM |
Memory Type: | Volatile |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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CY7C1355C-100BGCT is a type of memory, more specifically, a Static Random Access Memory (SRAM). SRAM is an important type of memory often utilized in computer systems, as it can retain data stored on it as long as it is provided with power. This form of memory is essential to many computer functions, as it enables the data to be retrieved quickly, allowing the computer to access applications and software in the blink of an eye.
The CY7C1355C-100BGCT offers a great performance and selection of features, which make it an attractive choice for memory solutions. It features a low quiescent current of 0.3uA typical, a propagation delay of 11ns typical, and a data retention voltage as low as 1.9V. This memory is also offered in a wide range of densities, from 32K to 512K, making it suitable for a variety of applications such as embedded systems, high-speed data transmission, and consumer electronics.
In terms of application field, the CY7C1355C-100BGCT has a wide range of possibilities, such as dynamic memory for microcontrollers and embedded systems, FIFO memory for data and communication, graphics memory for digital imaging, as well as storage memory for consumer electronics, mobiles, and other devices. It is suitable for any of these applications as it has very low power consumption, allowing the system to save energy while still being able to retain data quickly and reliably.
The working principle of the CY7C1355C-100BGCT is quite simple. When power is applied to the memory, it is initialized into a “read-only” state, meaning that it can only read data stored in it but cannot write or modify it. To write or modify data, a separate write signal must be applied to the memory, which will open a write window for the data to be written. Once the write window is closed, the memory is back into the read-only state, preventing any further modification of the stored data.
In conclusion, the CY7C1355C-100BGCT is an ideal choice for a wide range of application fields, due to its low power consumption, quick access times and wide range of densities. Its working principle is quite simple and allows the memory to retain data without allowing it to be modified or written over. This makes it ideal for applications such as embedded systems, FIFO memory, digital imaging and consumer electronics, where quick yet reliable access to stored data is essential.
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