
Allicdata Part #: | 428-3305-ND |
Manufacturer Part#: |
CY7C1360S-166BZXI |
Price: | $ 9.78 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC SRAM 9M PARALLEL 165FBGA |
More Detail: | SRAM - Synchronous Memory IC 9Mb (256K x 36) Paral... |
DataSheet: | ![]() |
Quantity: | 13 |
1 +: | $ 8.88930 |
10 +: | $ 8.23347 |
25 +: | $ 8.11916 |
50 +: | $ 8.01955 |
100 +: | $ 7.02835 |
250 +: | $ 6.72449 |
500 +: | $ 6.67964 |
1000 +: | $ 6.23135 |
Write Cycle Time - Word, Page: | -- |
Base Part Number: | CY7C1360 |
Supplier Device Package: | 165-FBGA (13x15) |
Package / Case: | 165-LBGA |
Mounting Type: | Surface Mount |
Operating Temperature: | -40°C ~ 85°C (TA) |
Voltage - Supply: | 3.135 V ~ 3.6 V |
Memory Interface: | Parallel |
Access Time: | 3.5ns |
Series: | -- |
Clock Frequency: | 166MHz |
Memory Size: | 9Mb (256K x 36) |
Technology: | SRAM - Synchronous |
Memory Format: | SRAM |
Memory Type: | Volatile |
Part Status: | Active |
Packaging: | Tray |
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The CY7C1360S-166BZXI is an 8-bit, high-speed SRAM (static random access memory) device that has been frequently used in embedded memory design applications. It is suited for various data storage applications such as Internet of Things (IoT) devices, embedded vision, CPUs and M2M Hubs. The CY7C1360S-166BZXI uses a high-speed, low-power double-data-rate (DDR) operation. It also employs a self-timed architecture that eliminates the need for external control during operation. It has a dual-bank structure for independent read and write operations.
Its features include a random access memory with an 8-bit data path operating at 200MHz, a power-down feature for lower power consumption, and a twin data port for simultaneous input and output operations. It also has an on-chip address and data bus multiplexer to facilitate fast access to different address and data bus configurations. The CY7C1360S-166BZXI has an in-system programmable memory space that allows the user to customize the various parameters of the memory.
The core of the CY7C1360S-166BZXI is the 8-bit synchronous SRAM interface. This interface allows simultaneous read and write operations on the same address and operates in a dual-port mode, providing two separate busses for accessing data stored in the SRAM. The SRAM can accommodate up to 256K of memory and has a minimum working voltage of 2.5 V.
The device has a sleep mode circuitry which allows for low power consumption when the system is in an idle state. In addition, it features a built-in output pass-gate circuitry, a programmable input and output hold time, and an on-chip oscillator for system clock synchronization. These features enable the user to easily customize the performance of the memory.
Another important feature of the CY7C1360S-166BZXI is its error correction control (ECC). ECC is an important feature as it helps to detect and correct single-bit and multi-bit errors. With this feature, the device can detect errors in data without the need for external interfaces.
The CY7C1360S-166BZXI has a wide range of applications which include automotive, industrial, media communications, medical, and consumer markets. It is used in various applications such as sensing, process control and data storage. With its high speed, low power and multiplexing capabilities, it has become a popular choice for embedded memory applications. Its ease of programming combined with its error detection and correction make it an ideal choice for memory solutions. It is also used in military and aerospace applications.
In conclusion, the CY7C1360S-166BZXI is an efficient SRAM device with a 5V single-ended input/output supply, 8-bit data path, 200MHz DDR operation, and an on-chip multiplexer. Furthermore, its low power consumption, high speed, and error correction control make it an ideal choice for embedded memory designs. Its wide range of applications make it a preferred choice in a variety of embedded memory applications.
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