
Allicdata Part #: | CY7C136E-25JXCT-ND |
Manufacturer Part#: |
CY7C136E-25JXCT |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC SRAM 16K PARALLEL 52PLCC |
More Detail: | SRAM - Dual Port, Asynchronous Memory IC 16Kb (2K ... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Memory Type: | Volatile |
Memory Format: | SRAM |
Technology: | SRAM - Dual Port, Asynchronous |
Memory Size: | 16Kb (2K x 8) |
Write Cycle Time - Word, Page: | 25ns |
Access Time: | 25ns |
Memory Interface: | Parallel |
Voltage - Supply: | 4.5 V ~ 5.5 V |
Operating Temperature: | 0°C ~ 70°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 52-LCC (J-Lead) |
Supplier Device Package: | 52-PLCC (19.13x19.13) |
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The CY7C136E-25JXCT is a dynamic random access memory (DRAM). It is a type of semiconductor memory which is widely used in modern electronic systems, from small embedded systems to larger computers. The CY7C136E-25JXCT DRAM consists of tiny memory cells stored in an array of columns and rows. The memory cells are each composed of a capacitor and a switch, which are capable of storing and retrieving digital data.
The CY7C136E-25JXCT has a relatively low power consumption when compared to other types of memory, and it is cheaper to manufacture than alternative types. This makes it an attractive choice for many applications, particularly in embedded systems and mobile devices. It is also used in audio/visual systems, such as digital TVs and music players.
The CY7C136E-25JXCT is comprised of two components: an array of memory cells and a control circuitry. The memory cells are organized in rows and columns, with each memory cell storing one bit of data (either a 1 or 0). The control circuitry is responsible for writing data to and retrieving data from the memory cells. It is also responsible for the overall operation of the memory itself.
To write data to the memory, the control circuitry first accesses the correct memory cell. The data to be written is then transmitted to the selected cell. The write process is completed when an electrical charge is applied to the cell, writing the data to the memory. To retrieve data from the memory, the control circuitry again locates the correct memory cell and retrieves the stored data.
The CY7C136E-25JXCT DRAM is a fast and reliable memory technology that is suitable for many applications. Its low power consumption makes it an attractive option for small, embedded systems, while its speed and capacity make it suitable for larger systems. Its wide range of operating temperature also make it suitable for use in a variety of environments, such as in harsh environments where extreme temperatures can cause other memory technologies to fail.
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