CY7C1371D-100AXCT Allicdata Electronics
Allicdata Part #:

CY7C1371D-100AXCT-ND

Manufacturer Part#:

CY7C1371D-100AXCT

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC SRAM 18M PARALLEL 100TQFP
More Detail: SRAM - Synchronous Memory IC 18Mb (512K x 36) Para...
DataSheet: CY7C1371D-100AXCT datasheetCY7C1371D-100AXCT Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Write Cycle Time - Word, Page: --
Base Part Number: CY7C1371
Supplier Device Package: 100-TQFP (14x20)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135 V ~ 3.6 V
Memory Interface: Parallel
Access Time: 8.5ns
Series: NoBL™
Clock Frequency: 100MHz
Memory Size: 18Mb (512K x 36)
Technology: SRAM - Synchronous
Memory Format: SRAM
Memory Type: Volatile
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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CY7C1371D-100AXCT is a 128 Kbit CMOS static RAM chip designed for high speed, high temperature, and high endurance applications. It is a nonvolatile memory device that uses a combination of ferroelectric and CMOS technology to provide a memory storage solution with extremely long cycle life. The CY7C1371D-100AXCT employs a ferroelectric layer as a data storage area. It has a unique ferroelectric data retention capability which allows it to retain its memory content even when power is switched off.

With its superior reliability, the CY7C1371D-100AXCT is a suitable choice for applications that require frequent access to data stored in memory. It is well-suited for applications that require high endurance, such as data logging, industrial control, automotive applications, and similar uses. This memory chip is also well-suited for applications that require low power consumption, such as cell phones, personal digital assistants (PDAs) and notebook computers.

The CY7C1371D-100AXCT operates at a maximum clock speed of 25MHz and is capable of accessing data stored in memory in a single clock cycle. Its 320x128x10 bit organization provides flexibility in the way data is stored and retrieved. The chip also includes a self-lock feature that prevents inadvertent data switching in the event of a power interruption.

The CY7C1371D-100AXCT uses the ferroelectric layer to achieve a remarkably long data retention time. The ferroelectric layer acts as a capacitor, storing the electrical charge and retaining the data it reads. That is, the same data can be read multiple times without having to power up the device. This property also allows for low power consumption since the device does not require a dedicated power supply.

The CY7C1371D-100AXCT also features low latency and fast random access time. This makes it ideal for applications that require data to be read and written quickly. The chip also offers fast write time and low power requirements, making it suitable for battery-operated applications. It provides a 32-bit data path and can be interfaced with any standard memory controller.

In summary, the CY7C1371D-100AXCT ferroelectric static RAM chip is an ideal choice for high endurance and low power applications. It offers high speed memory access, extended data retention and low power requirements, all in a small package. Its unique ferroelectric technology ensures reliable and long cycle life operation.

The specific data is subject to PDF, and the above content is for reference

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