CY7C1381D-100BZIT

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The CY7C1381D-100BZIT is a synchronous static random access memory (SRAM) that belongs to theCY7C13xxD family. It is widely used in many different applications and provides an optimal datastorage and retrieval service. The CY7C1381D-100BZIT can be used in the following applications:

• Data acquisition.
• Digital processing.
• Data communication.
• Embedded controller.
• Industrial control.
• Multi-media systems.
• Memory systems.

The CY7C1381D-100BZIT is an 8-bit synchronous static random access memory (SRAM). It is implementedin a synchronous SRAM technology with a single port for data access. The CY7C1381D-100BZITsupports both read/write operations and is organized in bytes. It stores up to 8 bits in each memorylocation. It operates with a single power supply of 5V, and a maximum access time of 75 ns.

The CY7C1381D-100BZIT uses a read/write memory structure to store data. The memory is organizedinto 4 byte banks, with each byte organized as one word. The CY7C1381D-100BZIT has a total of 168-bit words, with a total of 8 bytes of storage. The CY7C1381D-100BZIT supports both serial accessand parallel access. The CY7C1381D-100BZIT has a simple control logic and data behavior. There isa read/write enable (WE) line and a read/write strobe (RAS) line that control the read/writeoperations. The read (R) line is used for data read operations and the write (W) line is used fordata write operations. The CE (Chip Enable) line is used for part selection. The BYTE_RDN/BYTE_WRN lines are used for memory access.

The CY7C1381D-100BZIT is a self-timed synchronous SRAM, which means that its read and write operations are controlled by internally generated timing signals. The CY7C1381D-100BZIT uses a writeenable and a write strobe to control write operations. A write operation starts when the write enablesignal (WE) is asserted, followed by a write strobe (RAS) signal. The write enable signal (WE)informs the CY7C1381D-100BZIT that valid data is present and the write strobe signal (RAS) isused to latch the data into the memory cell. The read enable and read strobe signals are used tocontrol read operations. The read enable signal (R) informs the CY7C1381D-100BZIT that validdata is present, and the read strobe (RAS) is used to latch the data out of the memory cell.

The CY7C1381D-100BZIT is a fast, reliable and low power synchronous SRAM. It is ideal forapplications that require low power, high speed and large storage capacity. The CY7C1381D-100BZITis also suitable for a wide range of applications such as data acquisition, digital processing, datacommunication, embedded controllers, industrial control, multimedia systems and memory systems.

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