CY7C1399BN-15VXI Allicdata Electronics
Allicdata Part #:

CY7C1399BN-15VXI-ND

Manufacturer Part#:

CY7C1399BN-15VXI

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC SRAM 256K PARALLEL 28SOJ
More Detail: SRAM - Asynchronous Memory IC 256Kb (32K x 8) Para...
DataSheet: CY7C1399BN-15VXI datasheetCY7C1399BN-15VXI Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 256Kb (32K x 8)
Write Cycle Time - Word, Page: 15ns
Access Time: 15ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 28-BSOJ (0.300", 7.62mm Width)
Supplier Device Package: 28-SOJ
Base Part Number: CY7C1399
Description

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The CY7C1399BN-15VXI is an 8K x 9 2.5V asynchronous static random access memory (SRAM) with a low power standby mode. It is ideal for storage applications in the medical, automotive, and aerospace industries. Its power friendly design allows it to operate at only 4.5mA in active mode and 1mA in standby mode, providing an extended battery life while maintaining high performance.

The CY7C1399BN-15VXI is organized as 8,192 words of 9 bits each. All inputs and outputs are TTL compatible. This SRAM can be used in applications that require low power operation such as automotive, medical and embedded systems.The CY7C1399BN-15 series is available in standard as well as nonstandard package models.It features an array of features such as an automatic power-down mode to provide power savings, unlimited endurance, and ultralow noise level.

The CY7C1399BN-15VXI has a write capability of up to 9 bits per instruction. This means that the SRAM can store up to 8K x 9 bits of data in 8192 words, each with 9 bits per word. Writing and reading operations are straight forward and efficient. The CY7C1399BN-15VXI utilizes a patented ID scheme and supports page write operation. It also supports multiple write operations, allowing faster data storage. This makes the CY7C1399BN-15VXI ideal for applications that require high throughput of data.

The CY7C1399BN-15VXI utilizes a synchronous RAM architecture. A clock signal is used to synchronize the data and instructions. This allows for fast, predictable read and write operations. It also eliminates bus traffic, allowing the processor to maximize its performance. The SRAM also operates in a read-modify-write cycle, which allows for faster write times. In addition, the SRAM can be powered down to reduce power consumption, meaning that it is suitable for applications that require long term operation on batteries, such as handheld and portable devices.

Overall, the CY7C1399BN-15VXI is an ideal solution for a wide range of storage applications, from medical to automotive and aerospace. Its power-friendly design, advanced architecture, and extended battery life make it perfect for applications that require a high-performance yet low-power memory solution.

The specific data is subject to PDF, and the above content is for reference

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