
Allicdata Part #: | CY7C1413AV18-250BZCT-ND |
Manufacturer Part#: |
CY7C1413AV18-250BZCT |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC SRAM 36M PARALLEL 165FBGA |
More Detail: | SRAM - Synchronous, QDR II Memory IC 36Mb (2M x 18... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Memory Type: | Volatile |
Memory Format: | SRAM |
Technology: | SRAM - Synchronous, QDR II |
Memory Size: | 36Mb (2M x 18) |
Clock Frequency: | 250MHz |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | Parallel |
Voltage - Supply: | 1.7 V ~ 1.9 V |
Operating Temperature: | 0°C ~ 70°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 165-LBGA |
Supplier Device Package: | 165-FBGA (15x17) |
Base Part Number: | CY7C1413 |
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The CY7C1413AV18-250BZCT is an integrated memory device developed by Cypress Semiconductor Corporation. It is a high-performance and high-density SRAM designed using a 0.18um lithography process. It is used in a wide range of applications and can store up to 256Kbits of data in a single device.
The CY7C1413AV18-250BZCT integrates a high-performance internal data bus, a four-port address decoder, a high-speed write control circuit, and a three-dimensional page architecture for faster memory access. It also includes a low-power standby mode for reducing power consumption. The write-through and write-back modes provide flexibility for application designers when saving data.
The CY7C1413AV18-250BZCT is ideal for applications where reliable data storage and fast access time are important. It is often used in mobile devices and embedded systems, where its faster access time, low power consumption and reduced layout area are advantageous. It is also used in consumer electronics, automotive electronics, and medical devices.
The working principle of the CY7C1413AV18-250BZCT is based on the concept of "Page Mode". It allows for faster memory access and retrieval times by reducing page misses and page conflicts. When accessing data from the memory, the processor first sends an address to the four-port address decoder. The address is decoded, and the appropriate page is selected. The data stored in the page is then transferred to the data bus and returned to the processor. The data bus is designed to support multiple transactions simultaneously, allowing for faster transfers of data in applications where quick data access is crucial.
The CY7C1413AV18-250BZCT also supports multiple write modes, allowing for flexibility when saving data. The write-through mode is used when an application needs to store data quickly, while the write-back mode is used when an application needs to write data safely and securely. For example, the write-through mode can be used to write data to non-volatile memory quickly, while the write-back mode can be used to write data to non-volatile memory securely.
Overall, the CY7C1413AV18-250BZCT is an excellent memory device for applications in the mobile and embedded systems markets. Its high-speed write control circuit, low power consumption, and fast access time make it an ideal choice for applications where reliable data storage and quick access to data is necessary. It is also used in various other applications, including consumer electronics, automotive electronics, and medical devices.
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