CY7C1423AV18-267BZC

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TheCY7C1423AV18-267BZC is a static RAM (SRAM) integrated circuit specifically designed for use in embedded system applications. It is manufactured using CMOS technology and utilizes a 18-bit word data bus and a 8-bit data port. The device has a total of 16 KBytes on-chip memory capacity and includes a 2 KBytes boot block of masked ROM that can be used for storing program code or data. The CY7C1423AV18-267BZC SRAM is a low-power, high-speed RAM that is ideal for various embedded applications such as medical equipment, industrial instrumentation, and communications products. This device is available in a small 100-Pin PQFP package, which makes it suitable for applications requiring a high degree of component integration. The CY7C1423AV18-267BZC is also available in a number of different configurations that are suited for specific applications.

The CY7C1423AV18-267BZC is a dynamic RAM (DRAM) device that uses a high-performance internal SRAM cell array combined with an advanced row and column address decoder. The internal SRAM cell array consists of 16 KBytes of addressable RAM that can be used to store program code and/or data. The device also includes a 2 KBytes boot block of masked ROM that can be used for storing program code or data. The SRAM has a data access time of 8ns and is designed to operate at 3.3V and 5V and is certified for full industrial temperature range. The device also supports write protection and can be used to store data securely.

The CY7C1423AV18-267BZC SRAM utilizes clock frequencies up to 66MHz and provides enhanced performance by featuring a fast write cycle time, read burst mode, and byte write enable. The device also features an 18-bit wide asynchronous data port, which supports 8- and 16-bit busses. Additionally, the device provides an advanced row and column decoder that eliminates the need for external address decoding logic. The device also has a number of built-in features such as a static write protect and an optional bus I/O control function for controlling the CPU and memory protocol.

In order to use the CY7C1423AV18-267BZC SRAM, a design engineer should be familiar with its pinouts and packaging as well as the device’s timing specifications. The device’s read and write timing parameters such as access time, burst rate, and write cycle time must all be taken into consideration when designing a system. Additionally, a system must take into account the power and ground requirements for the device as well as the number of address and data lines required.

The CY7C1423AV18-267BZC SRAM is a versatile and reliable integrated circuit that is suitable for a wide range of embedded system applications. The device integrates an internal SRAM cell array and a powerful row and column decoder with a number of features that make it well suited for applications such as medical equipment, industrial instrumentation, and communications products. The device also features strong write protection and can be used to store data securely while providing superior performance with its fast write cycle times and read burst mode.

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