CY7C1423BV18-250BZC

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The CY7C1423BV18-250BZC is a high-performance and low-power static random-access memory (SRAM) device designed and manufactured by Cypress Memory Solutions. It is an elegant combination of efficient memory technology, high-density memory storage, and high-performance controller logic. The device offers an array of features to improve device performance while supporting high-speed and multi-port operations. 

The CY7C1423BV18-250BZC is a high-density, low-power SRAM device with a capacity of up to 256 megabits. The device is optimized for small form factor applications and comes in a variety of configurations including 8-bit, 16-bit, 32-bit, and 64-bit, each with variable word lengths. In addition to the standard SRAM, the device also includes a range of enhanced features, such as error correcting code (ECC) for detecting and correcting errors, and built-in error correction with no extra cost.

The CY7C1423BV18-250BZC features advanced power management features designed to reduce energy consumption while still providing excellent performance. The device supports a range of power supplies, including a Lithium-Ion battery option, to help reduce the overall system power consumption. In addition, advanced power management techniques such as power throttling, power gating, and dynamic voltage and frequency scaling, help to reduce power consumption when the system is not in use.

The CY7C1423BV18-250BZC is designed to provide robust operation in a variety of applications. The device is well suited for applications requiring high-density storage with low power consumption, such as embedded computer systems, graphics processing and embedded multimedia kinds of applications. The device is also suitable for streaming video and audio applications, real-time embedded control applications, and medical imaging applications.

The CY7C1423BV18-250BZC features a number of features to improve device performance. The device utilizes sophisticated algorithms and circuitry to achieve high-speed, low-power operation. The device also features a high-speed interconnect architecture designed to deliver high throughput while minimizing contention and latency. The device also offers a low-latency memory controller allowing for efficient execution of multiple concurrently running applications.

The CY7C1423BV18-250BZC is a high-performance and low-power static random-access memory device that is well-suited for a variety of embedded applications. The device includes a range of advanced features for improved performance and power management, making it an ideal memory solution for embedded applications. The device offers a high-density, low-power SRAM architecture with enhanced error-correcting codes, error correction with no extra cost, and robust operation for multiple high-speed operations. The CY7C1423BV18-250BZC is an excellent choice for embedded systems utilizing memory-intensive applications.

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