
Allicdata Part #: | CY7C1425UV18-267BZI-ND |
Manufacturer Part#: |
CY7C1425UV18-267BZI |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC SRAM 36M PARALLEL 165FBGA |
More Detail: | SRAM - Synchronous, QDR II Memory IC 36Mb (4M x 9)... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tray |
Part Status: | Obsolete |
Memory Type: | Volatile |
Memory Format: | SRAM |
Technology: | SRAM - Synchronous, QDR II |
Memory Size: | 36Mb (4M x 9) |
Clock Frequency: | 267MHz |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | Parallel |
Voltage - Supply: | 1.7 V ~ 1.9 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 165-LBGA |
Supplier Device Package: | 165-FBGA (13x15) |
Base Part Number: | CY7C1425 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
CY7C1425UV18-267BZI is a popular memory component used in many electronic systems and applications. It is a type of static RAM (SRAM), which is a type of non-volatile memory that holds data in an electronic form. SRAM is used in a wide range of electronic applications, such as embedded controllers, medical and industrial systems, microprocessors, digital signal processors, and military systems. The CY7C1425UV18-267BZI is a low-voltage, high-speed, CMOS static RAM component, with fast access times and data organizations from 32K to 256K.
The main application field of CY7C1425UV18-267BZI is embedded systems and applications, as it provides high-speed data access, low power consumption, fast access times, and data organization from 32K to 256K. It can also be used in any type of embedded system for temporary data storage, including automotive electronics, medical, industrial, and military systems.
The working principle of CY7C1425UV18-267BZI component is quite simple. It stores data in a memory cell which, depending on the voltage applied to it, either holds a "0" or a "1". When the voltage is set to "1", then binary values are represented as "1", while when the voltage is set to "0", binary values are represented as "0". Then, each memory cell can be accessed and read by a controller, thus enabling data to be read, written, or erased at any given time. A controller can also program its own address from which it can access the memory cell data.
The CY7C1425UV18-267BZI component is capable of supporting a wide range of operations, such as refresh, refresh rate, byte-level read/write operations, serial interface read/write operations, and burst read/write operations. It also provides additional features such as write protection for the internal memory and write protection for the bus. The component is manufactured using CMOS process technology, which provides low power consumption and high-speed operation.
Overall, CY7C1425UV18-267BZI is an ideal component for embedded systems and applications. It provides fast access times, low power consumption, and data organizations from 32K to 256K. It also supports a wide range of operations, and it is manufactured using advanced CMOS process technology. All these features make it an ideal solution for applications requiring high-speed data access and low power consumption.
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