CY7C1480BV25-167BZXC Allicdata Electronics
Allicdata Part #:

CY7C1480BV25-167BZXC-ND

Manufacturer Part#:

CY7C1480BV25-167BZXC

Price: $ 82.15
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC SRAM 72M PARALLEL 165FBGA
More Detail: SRAM - Synchronous Memory IC 72Mb (2M x 36) Parall...
DataSheet: CY7C1480BV25-167BZXC datasheetCY7C1480BV25-167BZXC Datasheet/PDF
Quantity: 1000
105 +: $ 74.68090
Stock 1000Can Ship Immediately
$ 82.15
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 72Mb (2M x 36)
Clock Frequency: 167MHz
Write Cycle Time - Word, Page: --
Access Time: 3.4ns
Memory Interface: Parallel
Voltage - Supply: 2.375 V ~ 2.625 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-FBGA (15x17)
Description

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CY7C1480BV25-167BZXC is a Static RAM (SRAM) made by Cypress Semiconductor, which is used in digital logic and embedded devices. The device is a 16Mbit high-density memory that works on a wide range of system frequencies, providing a cost-effective option for applications that require large amounts of memory. The device also offers low power consumption and is ideal for applications that need to reduce power consumption.

CY7C1480BV25-167BZXC can be found in many areas of modern electronics, including industrial automation and robotics, medical, aerospace, defense, and automotive. It is often used to store application-specific information, such as passwords and other safety codes. Cybersecurity applications also benefit from CY7C1480BV25-167BZXC, as its security features make it resistant to malicious tampering or data leakage. It is also used in military, defense, and aerospace applications for secure data storage.

CY7C1480BV25-167BZXC has a multi-bit burst architecture, allowing its data to be read or written more rapidly due to the fact that it can perform multiple operations in one go. Its burst mode can execute up to four simultaneous memory accesses, which facilitate faster loading and operation times than those of single-access memories. Its burst architecture also reduces system power consumption, which is particularly beneficial for battery-powered or mobile applications.

The device features a programmable output signal, which is used for monitoring the status of the memory. The signal goes low when an operation is completed, and can be configured to reflect other memory conditions, such as when the device is operating at a different speed than requested. Additionally, CY7C1480BV25-167BZXC has a built-in error correction code, which reduces the chance of data errors in case of power failure or other memory interruptions.

The device is organized into 512 rows, with each loop having 128 bits of storage. Each address is divided into four equal-sized fields, with each field containing 32-bit words. The device has a capacity of 16 megabits, so it is able to store up to 32768 32-bit words. The device operates at a speed of 66MHz and provides a typical access time of 150ns for a single word.

CY7C1480BV25-167BZXC is a low-power and high-density device that can be used for a wide range of applications. Its multi-bit burst architecture, low power consumption and programmable configuration options make it an ideal choice for embedded and industrial applications that require fast memory access and reliable data storage.

The specific data is subject to PDF, and the above content is for reference

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