CY7C1480BV33-250BZI

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CY7C1480BV33-250BZI is a monolithic Memory component from Cypress Semiconductor. It is a low-power 16K x 8 Non-Volatile Static RAM (NVSRAM), designed for low voltage operation and applications requiring random access memory functionality. Technologically, it is a hybrid component combining SRAM and EEPROM technologies, allowing for the reliable storage of data in non-volatile memory with no power source. CY7C1480BV33-250BZI is optimized for low-voltage applications, so it can be used in automotive, industrial, and consumer electronics applications. This component can operate on a single +3.0V to +5.5V power supply.

The CY7C1480BV33-250BZI component type is called a dual access non-volatile static RAM (NVSDRAM). It is designed to combine the fast access of SRAM with the ability of EEPROM to store data without power. The CY7C1480BV33-250BZI is a 16 kilobyte (16K) memory array organized as 8K words by 16 bits, with an 8K bits static random access memory (SRAM) and 8K bits electrically erasable programmable read-only memory (EEPROM).

The CY7C1480BV33-250BZI allows both SRAM and EEPROM access in the same device. It offers users the freedom to switch to SRAM mode when speed is needed, or to EEPROM mode when memory data needs to be stored without an active power source. The device also supports direct addressing of the EEPROM bits in addition to normal SRAM accesses. The simplified addressing mode of the EEPROM gives the user the ability to access the 64 bytes of “most recently written” memories at a 0-cycle access time.

The CY7C1480BV33-250BZI is ideal for applications requiring fast access and power-free data storage. It is capable of transferring data at 66MHz, reducing data access time drastically and allowing faster system performance. It also features an on-chip built-in Error Detection and Correction logic, which enables it to detect and correct single-bit errors during program/erase and read operations. This ensures accurate and reliable data in the long-term storage of data in industrial and automotive applications.

CY7C1480BV33-250BZI provides excellent performance and power efficiency, making it ideal for reliable low-power operation in both static and dynamic memory applications. Its power efficient design includes ultra low-power stand-by and powerful dual access capability which greatly reduces active power consumption. The device also supports different operating modes that adapt to the requirements of different applications. It also has an internal oscillator circuit and a programmable timeout, allowing users to set up clock state and access times.

The CY7C1480BV33-250BZI is a versatile, reliable, and power-efficient Memory component suitable for low-voltage applications and static/dynamic memory applications. Its low-power features and Dual Access capability make it an ideal choice for mission-critical applications in industrial and automotive environments, as well as consumer electronics applications requiring fast data access and data storage without a power source.

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