CY7C1565KV18-500BZI

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CY7C1565KV18-500BZI is a 128-Kbit nonvolatile Static Random Access Memory (SRAM) device manufactured by Cypress. This SRAM device is used in applications where data needs to be stored and retrieved regularly. It is a versatile and cost-effective choice for many applications including industrial and consumer applications.

The CY7C1565KV18-500BZI is a high-performance nonvolatile memory device that provides both nonvolatile data storage and data read/write operations. Using a Static CMOS architecture, this high-speed device operates at up to 54MHz, delivering read/write cycle times of as little as 7µs. It offers a wide range of features, including extended temperature range and voltage operation, low power consumption, and Error Detection and Correction (EDAC) for enhanced reliability. The device is ideal for applications that require extended operational temperature range, high-speed operations and robust data reliability.

The application fields of CY7C1565KV18-500BZI are varied and the potential applications are broad. This nonvolatile SRAM device is widely used in industrial equipment, machine controls, automotive electronics, medical systems, instrumentation, storage systems, and consumer electronics.

The working principle of CY7C1565KV18-500BZI is based on two elements: charge and discharge of a capacitor in the memory cell. The memory cell is activated by applying a voltage across the capacitor. This causes the memory cell to discharge, forming a low impedance path between the two states of the cell. The data is written to the memory cell by either grounding the voltage source or by applying the voltage source to a different voltage level depending on whether a 0 or 1 state is desired for a particular memory location. To read the memory, a voltage is applied to the capacitor, and the impedance path is read from the cell.

The CY7C1565KV18-500BZI offers a wide range of advantages for applications needing both performance and cost savings. The device is highly reliable and offers data protection with the error detection and correction (EDAC) circuitry. It’s low power consumption, low voltage operation and extended temperature range operation make this device a great choice for applications needing portability and high performance.

The CY7C1565KV18-500BZI is an innovative nonvolatile SRAM device, providing exceptional data storage and data access capabilities. It’s an efficient and reliable choice for applications needing robust data storage and read/write operations. This nonvolatile memory device offers a versatile solution for a variety of applications, including industrial and consumer applications.

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