CY7C1568KV18-450BZC Allicdata Electronics
Allicdata Part #:

CY7C1568KV18-450BZC-ND

Manufacturer Part#:

CY7C1568KV18-450BZC

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC SRAM 72M PARALLEL 165FBGA
More Detail: SRAM - Synchronous, DDR II+ Memory IC 72Mb (4M x 1...
DataSheet: CY7C1568KV18-450BZC datasheetCY7C1568KV18-450BZC Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, DDR II+
Memory Size: 72Mb (4M x 18)
Clock Frequency: 450MHz
Write Cycle Time - Word, Page: --
Memory Interface: Parallel
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-FBGA (13x15)
Base Part Number: CY7C1568
Description

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Memory has been an important part of computing for more than half a century. It stores and retrieves data and instructions, and is used for many essential operations. Memory can be divided into several categories, with the most commonly used being volatile and non-volatile memory. Volatile memory is defined as memory that is lost when power is turned off, while non-volatile memory is defined as memory that is not lost when power is turned off.

The CY7C1568KV18-450BZC is a low-power 8K x 8-bit non-volatile memory, made by Cypress Semiconductor. It is a low-voltage, high-speed, low-power, 8K x 8-bit non-volatile memory. This memory is fabricated using a single-transistor memory cell. It is designed to operate at a voltage range of 1.65V to 3.6V, and data retention time greater than 20 years at the storage temperature range of -55°C to +125°C.

The CY7C1568KV18-450BZC is an ideal solution for applications requiring fast write times, high-reliability, and low-power consumption. It is used in various applications such as microprocessors and embedded systems, automotive electronics, consumer electronics, communication systems, and computer peripherals.

The CY7C1568KV18-450BZC is based on the Single Transistor Memory Cell (STMC) technology. The architecture of the memory cell is based on a single "FET switch". This switch is connected between two nodes, the gate and the drain, which are connected to the power supply. When a signal is applied to the gate, the switch allows current to flow from the drain node to the source node, thus storing a single bit of data.

The STMC technology allows for very fast write times, as compared to other non-volatile memory technologies. The write speed is on the order of nanoseconds, which is considerably faster than the write speed of NOR, E then and AA-type non-volatile memory. As such, the CY7C1568KV18-450BZC is well-suited for applications requiring fast writing times and high-reliability.

The CY7C1568KV18-450BZC also offers high-reliability in terms of data retention, endurance and EMC robustness. The maximum data retention time is 20 years at the storage temperature range of -55°C to +125°C, and over 100 million write-cycles are guaranteed. The device is also EMC compliant and can operate in noisy electrical environments.

The CY7C1568KV18-450BZC is a low-power, non-volatile memory offering fast write times, high reliability and low power consumption. It is used in various applications that require high-speed memory, such as microprocessors, embedded systems, automotive electronics, consumer electronics, communication systems, and computer peripherals. The STMC technology is the key to achieving fast write times, and the device also offers excellent data retention, endurance and EMC robustness.

The specific data is subject to PDF, and the above content is for reference

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