
Allicdata Part #: | CY7C1570KV18-450BZC-ND |
Manufacturer Part#: |
CY7C1570KV18-450BZC |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC SRAM 72M PARALLEL 165FBGA |
More Detail: | SRAM - Synchronous, DDR II+ Memory IC 72Mb (2M x 3... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tray |
Part Status: | Obsolete |
Memory Type: | Volatile |
Memory Format: | SRAM |
Technology: | SRAM - Synchronous, DDR II+ |
Memory Size: | 72Mb (2M x 36) |
Clock Frequency: | 450MHz |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | Parallel |
Voltage - Supply: | 1.7 V ~ 1.9 V |
Operating Temperature: | 0°C ~ 70°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 165-LBGA |
Supplier Device Package: | 165-FBGA (13x15) |
Base Part Number: | CY7C1570 |
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The CY7C1570KV18-450BZC memory system, known as the SystemCache High Speed DRAM, is a dynamic random-access memory (DRAM) device with an ultra-fast 76MHz clock speed. This device is an integrated, dual-port memory subsystem that provides both access speed and data throughput to support a broad range of applications. It is characterized by a high-bandwidth, low-access latency hierarchy that enables high-performance computing applications such as those found in embedded systems or gaming systems. In addition to its fast performance, the SystemCache High Speed DRAM also offers robust memory protection, error correction and data reliability.
The CY7C1570KV18-450BZC is a synchronous, dual-ported, device containing a combination of two high-performance synchronous caches and two high-speed memory banks and provides 128MB of DDR2 SDRAM memory with speeds up to 400MHz. It has a 16-bit data port and an 8-bit address port and is designed to support both single and multiple processor systems. The device supports a latency range of 0 to 4us, allowing for the highest level of throughput available. The dual port memory subsystem also allows data to be transferred between the two connected processors, allowing for efficient interprocessor communications.
The CY7C1570KV18-450BZC is well suited for embedded system memory applications such as industrial automation, medical devices, gaming consoles, or any system in which reliable, high-speed data access is essential. It offers the necessary performance for executing code-intensive tasks with the utmost efficiency. The device provides enhanced system performance due to its two high-speed cache bays, which support a burst transfer rate of up to 2.4GB/s.
The SystemCache High Speed DRAM utilizes an 8-bit NAND/NOR edge-triggered memory cell in order to achieve ultra-fast data communication between the central processor and the memory. This technology is based on a self-timed asynchronous logic that keeps track of the clock cycles and the address of each data packet. The device utilizes a sophisticated architecture in order to achieve a low-access latency hierarchy. The device utilizes a low-latency pipeline structure with multiple simultaneous transfers in progress. This structure allows for the most efficient utilization of bandwidth and latency.
The SystemCache High Speed DRAM is also equipped with additional features to provide higher levels of reliability, such as an ECC memory cell that can detect and correct single-bit errors. In addition, the device contains a parity-check system for detecting double-bit errors and a register for writing/reading configuration information. The device also has a built-in test engine which can run self-tests to make sure that the device is operating correctly.
The SystemCache High Speed DRAM is a reliable, high-performance memory system that can be used in a variety of embedded systems and gaming systems. It offers high-speed data transfers and low-latency memory access that allows for the most efficient utilization of bandwidth and latency. The device also contains several features to ensure the highest level of reliability and performance.
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