CY7C1570SV18-400BZXC Allicdata Electronics
Allicdata Part #:

CY7C1570SV18-400BZXC-ND

Manufacturer Part#:

CY7C1570SV18-400BZXC

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC SRAM 72M PARALLEL 165FBGA
More Detail: SRAM - Synchronous, DDR II+ Memory IC 72Mb (2M x 3...
DataSheet: CY7C1570SV18-400BZXC datasheetCY7C1570SV18-400BZXC Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, DDR II+
Memory Size: 72Mb (2M x 36)
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: --
Memory Interface: Parallel
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-FBGA (13x15)
Base Part Number: CY7C1570
Description

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Memory technology has come a long way since the days of cores and ferrite, bringing us higher speeds, less space, and greater efficiency. CY7C1570SV18-400BZXC is the latest offering from the memory scene, specifically designed to bring fast and energy-efficient memory to embedded systems. In this article, we\'ll explore the unique features of CY7C1570SV18-400BZXC, as well as its typical application fields and working principles.

CY7C1570SV18-400BZXC is a low-power FPGA-based embedded Static RAM (SRAM) employing advanced CMOS technology. It features advanced features such as Nonvolatile Static RAM (NVSRAM) with error correction coding (ECC), which help to provide high performance, low power consumption, and reliable data storage. The block size is 4k x 4, with a matching 4k x 8 configuration possible using multiple devices in the same package. It has a maximum random cycle time of 10 ns.

CY7C1570SV18-400BZXC is ideal for applications that require instant access of data, with its fast random read/write access and low power consumption. Typical applications include data buffering and high-speed streaming, as well as applications that require highly reliable, high-performance data storage without the need for an external power supply. It is frequently used as an alternative to external Flash memory, offering better data protection and reliability.

The working principle of CY7C1570SV18-400BZXC is based on transistors and capacitors. Each cell is constructed using two transistors and a capacitor, connected to the address, data, and control lines. Data can be read or written to the cell by changing its voltage, according to a specific set of instructions. When reading, data from the cell is amplified and transferred to the output buffer, while when writing, data is first transferred to the output buffer, then to the cells.

CY7C1570SV18-400BZXC is also equipped with Error Correction Coding (ECC) capability, which helps to protect data by correcting errors on the fly. ECC works by additional bits added to each cell, which can be used to check if the data has been corrupted or lost, and to restore it if needed. With ECC, CY7C1570SV18-400BZXC offers better data reliability and higher storage capacities, compared to other types of SRAM.

In conclusion, CY7C1570SV18-400BZXC is a reliable, high-performance, low-power FPGA-based embedded SRAM that combines advanced features such as NVSRAM with ECC and fast random read/write access, making it ideal for data buffering, streaming, and other applications that require high-performance data storage without the need for an external power supply. Its working principles are based on the principles of transistors and capacitors, and its ECC capabilities add an extra level of data security and reliability.

The specific data is subject to PDF, and the above content is for reference

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